Search results for: resistive leakage current

Authors: Anil S. Khopkar, Kartik S. Pandya

Abstract:

Lightning overvoltage phenomenon in power systems cannot be avoided; however, it can be controlled to certain extent. To prevent system failure, power system equipment must be protected against overvoltage. Metal Oxide Surge Arrestors (MOSA) are connected in the system to provide protection against overvoltages. Under normal working conditions, MOSA function as, insulators, offering a conductive path during overvoltage events. MOSA consists of zinc oxide elements (ZnO Blocks) which has non-linear V-I characteristics. The ZnO blocks are connected in series and fitted in ceramic or polymer housing. Over time, these components degrade due to continuous operation. The degradation of zinc oxide elements increases the leakage current flowing through the surge arrestors. This increased leakage current results in elevated temperatures within the surge arrester, further decreasing the resistance of the zinc oxide elements. Consequently, the leakage current increases, leading to higher temperatures within the MOSA. This cycle creates thermal runaway conditions for the MOSA. Once a surge arrester reaches the thermal runaway condition, it cannot return to normal working conditions. This condition is a primary cause of premature failure of surge arrestors. Given that MOSA constitutes a core protective device for electrical power systems against transients, it contributes significantly to the reliable operation of power system networks. Therefore, periodic condition monitoring of surge arrestors is essential. Both online and offline condition monitoring techniques are available for surge arrestors. Offline condition monitoring techniques are not as popular because they require the removal of surge arrestors from the system, which requires system shutdown. Therefore, online condition monitoring techniques are more commonly used. This paper presents an evaluation technique for the surge arrester condition based on leakage current analysis. The maximum amplitudes of total leakage current (IT), fundamental resistive leakage current (IR), and third harmonic resistive leakage current (I3rd) are analyzed as indicators for surge arrester condition monitoring.

Keywords: Metal Oxide Surge Arrester, MOSA, Over voltage, total leakage current, resistive leakage current, third harmonic resistive leakage current, capacitive leakage current.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 0

Authors: Z. Fang, H.Y. Yu, W.J. Liu, N. Singh, G.Q. Lo

Abstract:

High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.

Keywords: RRAM, resistive switching, temperature instability.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2385

Authors: Waluyo, Ngapuli I. Sinisuka, Suwarno, Maman A. Djauhari

Abstract:

This paper presents the experimental results of comparison between leakage currents and discharge currents. The leakage currents were obtained on polluted porcelain insulator. Whereas, the discharge currents were obtained on lightly artificial polluted porcelain specimen. The conducted measurements were leakage current or discharge current and applied voltage. The insulator or specimen was in a hermetically sealed chamber, and the current waveforms were analyzed using FFT. The result indicated that the leakage current (LC) on low RH condition the fifth harmonic would be visible, and followed by the seventh harmonic. The insulator had capacitive property. Otherwise, on 99% relative humidity, the fifth harmonic would also be visible, and the phase angle reached up to 12.2 degree. Whereas, on discharge current, the third harmonic would be visible, and followed by fifth harmonic. The third harmonic would increase as pressure reduced. On this condition, the specimen had a non-linear characteristics

Keywords: leakage current, discharge current, third harmonic, fifth harmonic, porcelain.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1627

Authors: Waluyo, Parouli M. Pakpahan, Suwarno, Maman A. Djauhari

Abstract:

This paper presents the experimental results of leakage current waveforms which appears on porcelain insulator surface due to existence of artificial pollutants. The tests have been done using the chemical compounds of NaCl, Na2SiO3, H2SO4, CaO, Na2SO4, KCl, Al2SO4, MgSO4, FeCl3, and TiO2. The insulator surface was coated with those compounds and dried. Then, it was tested in the chamber where the high voltage was applied. Using correspondence analysis, the result indicated that the fundamental harmonic of leakage current was very close to the applied voltage and third harmonic leakage current was close to the yielded leakage current amplitude. The first harmonic power was correlated to first harmonic amplitude of leakage current, and third harmonic power was close to third harmonic one. The chemical compounds of H2SO4 and Na2SiO3 affected to the power factor of around 70%. Both are the most conductive, due to the power factor drastically increase among the chemical compounds.

Keywords: Chemical compound, harmonic, porcelain insulator, leakage current.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1828

Authors: Morné Roman, Robert van Zyl, Nishanth Parus, Nishal Mahatho

Abstract:

Leakage current monitoring for high voltage transmission line insulators is of interest as a performance indicator. Presently, to the best of our knowledge, there is no commercially available, clamp-on type, non-intrusive device for measuring leakage current on energised high voltage direct current (HVDC) transmission line insulators. The South African power utility, Eskom, is investigating the development of such a hand-held sensor for two important applications; first, for continuous real-time condition monitoring of HVDC line insulators and, second, for use by live line workers to determine if it is safe to work on energised insulators. In this paper, a DC leakage current sensor based on magnetic field sensing techniques is developed. The magnetic field sensor used in the prototype can also detect alternating current up to 5 MHz. The DC leakage current prototype detects the magnetic field associated with the current flowing on the surface of the insulator. Preliminary HVDC leakage current measurements are performed on glass insulators. The results show that the prototype can accurately measure leakage current in the specified current range of 1-200 mA. The influence of external fields from the HVDC line itself on the leakage current measurements is mitigated through a differential magnetometer sensing technique. Thus, the developed sensor can perform measurements on in-service HVDC insulators. The research contributes to the body of knowledge by providing a sensor to measure leakage current on energised HVDC insulators non-intrusively. This sensor can also be used by live line workers to inform them whether or not it is safe to perform maintenance on energized insulators.

Keywords: Direct current, insulator, leakage current, live line, magnetic field, sensor, transmission lines.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 883

Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2841

Authors: P.K. Sharma, B. Bhargava, S. Akashe

Abstract:

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3389

Authors: Vijay Kumar Sharma, Manisha Pattanaik, Balwinder Raj

Abstract:

Minimizations of power dissipation, chip area with higher circuit performance are the necessary and key parameters in deep submicron regime. The leakage current increases sharply in deep submicron regime and directly affected the power dissipation of the logic circuits. In deep submicron region the power dissipation as well as high performance is the crucial concern since increasing importance of portable systems. Number of leakage reduction techniques employed to reduce the leakage current in deep submicron region but they have some trade-off to control the leakage current. ONOFIC approach gives an excellent agreement between power dissipation and propagation delay for designing the efficient CMOS logic circuits. In this article ONOFIC approach is compared with LECTOR technique and output results show that ONOFIC approach significantly reduces the power dissipation and enhance the speed of the logic circuits. The lower power delay product is the big outcome of this approach and makes it an influential leakage reduction technique.

Keywords: Deep submicron, Leakage Current, LECTOR, ONOFIC, Power Delay Product

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2476

Authors: Md. Noman Habib Khan, S. Khan, T. S. Gunawan, R. I. Boby

Abstract:

The photovoltaic (PV) panel with no galvanic isolation system is well known technique in the world which is effective and delivers power with enhanced efficiency. The PV generation presented here is for stand-alone system installed in remote areas when as the resulting power gets connected to electronic load installation instead of being tied to the grid. Though very small, even then transformer-less topology is shown to be with leakage in pico-ampere range. By using PWM technique PWM, leakage current in different situations is shown. The results shown in this paper show how the pico-ampere current is reduced to femto-ampere through use of inductors and capacitors of suitable values of inductor and capacitors with the load.

Keywords: Photovoltaic (PV) panel, Duty cycle, Pulse Duration Modulation (PDM), Leakage current.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1435

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2568

Authors: Arash Azizi Mazreah, Mohammad Reza Sahebi, Mohammad T. Manzuri Shalmani

Abstract:

To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.

Keywords: SRAM Cell, leakage current, cell area.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1733

Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1716

Authors: Shanmuka Naga Raju

Abstract:

This paper  presents PV system without considering transformer connected to electric grid. This is considered more economic compared to present PV system. The problem that occurs when transformer is not considered appears with a leakage current near capacitor connected to ground. Bipolar Pulse Width Modulation (BPWM) technique along with filter L-C-L configuration in the circuit is modeled to shrink the leakage current in the circuit. The DC/AC inverter is modeled using H-bridge Insulated Gate Bipolar Transistor (IGBT) module which is controlled using proposed Bipolar PWM control technique. To extract maximum power, Maximum Power Point Technique (MPPT) controller is used in this model. Voltage and current regulators are used to determine the reference voltage for the inverter from active and reactive current where reactive current is set to zero. The PLL is modeled to synchronize the measurements. The model is designed with MATLAB Simulation blocks and compared with the methods available in literature survey to show its effectiveness.

Keywords: Photovoltaic, PV, pulse width modulation, PWM, perturb and observe, phase locked loop.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 983

Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2181

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2963

Authors: Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 5408

Authors: Youngkuen Cho, Seonhong Hwang, Jinyoung Min, Youngho Kim, Dohyung Lim, Hansung Kim

Abstract:

Many studies have emphasized the importance of resistive exercise to maintain a healthy human body, particular in prevention of weakening of physical strength. Recently, some studies advocated that an application of vibration as a supplementary means in a regular training was effective in encouraging physical strength. Aim of the current study was, therefore, to identify if an application of vibration in a resistive exercise was effective in encouraging physical strength as that in a regular training. A 3-dimensional virtual lower extremity model for a healthy male and virtual leg-press model were generated and synchronized. Dynamic leg-press exercises on a slide machine with/without extra load and on a footboard with vibration as well as on a slide machine with extra load were analyzed. The results of the current indicated that the application of the vibration on the dynamic leg-press exercise might be not greatly effective in encouraging physical strength, compared with the dynamic leg press exercise with extra load. It was, however, thought that the application of the vibration might be helpful to elderly individuals because the reduced maximum muscle strength appeared by the effect of the vibration may avoid a muscular spasm, which can be driven from a high muscle strength sometimes produced during the leg-press exercise with extra load.

Keywords: Resistive exercise, leg-press exercise, muscle strength.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1855

Authors: Hong Li, Linfeng Li, Jianping Hu

Abstract:

With rapid technology scaling, the proportion of the static power consumption catches up with dynamic power consumption gradually. To decrease leakage consumption is becoming more and more important in low-power design. This paper presents a power-gating scheme for P-DTGAL (p-type dual transmission gate adiabatic logic) circuits to reduce leakage power dissipations under deep submicron process. The energy dissipations of P-DTGAL circuits with power-gating scheme are investigated in different processes, frequencies and active ratios. BSIM4 model is adopted to reflect the characteristics of the leakage currents. HSPICE simulations show that the leakage loss is greatly reduced by using the P-DTGAL with power-gating techniques.

Keywords: Leakage reduction, low power, deep submicronCMOS circuits, P-type adiabatic circuits.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1914

Authors: Ankit Mitra

Abstract:

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-V_t transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.

Keywords: CMOS, Dual-Port, Data Retention Voltage, 8T SRAM, Leakage Current, Noise Margin, Loop-cutting, Single-ended.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3419

Authors: Hsin-Ping Huang, Shyankay Jou

Abstract:

Resistive switching of aluminum nitride (AlN_x) thin film was demonstrated in a TaN/AlN_x/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), R_HRS/R_LRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlN_x/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlN_x film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2668

Authors: W. R. Li, J. K. Xia, R. Q. Peng, Z. Y. Guo, L. Jiang

Abstract:

According to 3D magnetic circuit of the transverse flux PM linear machine, distribution law is presented, and analytical expression of axial end flux leakage is derived using numerical method. Maxwell stress tensor is used to solve detent force of mover. A 3D finite element model of the transverse flux PM machine is built to analyze the flux distribution and detent force. Experimental results of the prototype verified the validity of axial end flux leakage and detent force theoretical derivation, the research on axial end flux leakage and detent force provides a valuable reference to other types of linear machine.

Keywords: Transverse flux PM linear machine, flux distribution, axial end flux leakage, detent force.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1538

Authors: N. Sumathi, R. Srinivasa Rao

Abstract:

This paper presents the experimental results of 11 kV and 33 kV silicon composite insulators under artificial salt and urea polluted conditions. The tests were carried out under different seasons like summer, winter, and monsoon. The artificial pollution is prepared by properly dissolving the salt and urea in the water. The prepared salt and urea pollutions are sprayed on the insulators and dried up for sufficiently large time. The process is continued until a uniform layer is formed on the surface of insulator. For each insulator rating, four samples were tested. The maximum leakage current and breakdown voltage were measured. From experimental data, performance of test specimen is evaluated by comparing breakdown voltage and leakage current during different seasons when exposed to salt and urea polluted conditions. From these results the performance of the insulators can be predicted when they are installed in industrial, agricultural, and coastal areas. The experimental tests were carried out in the High Voltage laboratory using two stage cascade transformer having the rating of 1000 kVA, 500 kV.

Keywords: Silicon composite insulators, Urea pollution, Leakage current, Breakdown voltage, salt pollution, artificial pollution.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1852

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfO_x/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Keywords: HfOx, resistive switching, RRAM.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1825

Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

Abstract:

The power converter that feeds high-frequency, highvoltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively lowfrequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid overvoltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: High-voltage transformer, Resonant converter, Softcommutation.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3039

Authors: S.M.Hosseinalipour, H.Aghakhani

Abstract:

Considering the numerous applications of the study of the flow due to leakage in a buried pipe in unsaturated porous media, finding a proper model to explain the influence of the effective factors is of great importance.There are various important factors involved in this type of flow such as: pipe leakage size and location, burial depth, the degree of the saturation of the surrounding porous medium, characteristics of the porous medium, fluid type and pressure of the upstream.In this study, the flow through unsaturated porous media due to leakage of a buried pipe for up and down leakage location is studied experimentally and numerically and their results are compared. Study results show that Darcy equation together with BCM method (for calculating the relative permeability) have suitable ability for predicting the flow due to leakage of buried pipes in unsaturated porous media.

Keywords: Buried, Leaking pipe, Porous media, Unsaturated

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2352

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.

Keywords: HfOx, resistive switching, RRAM, metal capping.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2007

Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

Abstract:

This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC, Programmable Reference.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2096

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3269

Authors: Sikder Mohammad Faruk, Mir Mofajjal Hossain, Muhibul Haque Bhuyan

Abstract:

In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.

Keywords: input current wave, three-phase rectifier, passive filter, PSPICE Simulation

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 459

Authors: Liping Zhang, Kelin Li

Abstract:

In this paper, a class of impulsive BAM fuzzy cellular neural networks with time delays in the leakage terms is formulated and investigated. By establishing a delay differential inequality and M-matrix theory, some sufficient conditions ensuring the existence, uniqueness and global exponential stability of equilibrium point for impulsive BAM fuzzy cellular neural networks with time delays in the leakage terms are obtained. In particular, a precise estimate of the exponential convergence rate is also provided, which depends on system parameters and impulsive perturbation intention. It is believed that these results are significant and useful for the design and applications of BAM fuzzy cellular neural networks. An example is given to show the effectiveness of the results obtained here.

Keywords: Global exponential stability, bidirectional associative memory, fuzzy cellular neural networks, leakage delays, impulses.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1300