@article{(Open Science Index):https://publications.waset.org/pdf/9998686,
	  title     = {Resistive Switching in TaN/AlNx/TiN Cell},
	  author    = {Hsin-Ping Huang and  Shyankay Jou},
	  country	= {},
	  institution	= {},
	  abstract     = {Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
},
	    journal   = {International Journal of Chemical and Molecular Engineering},
	  volume    = {8},
	  number    = {7},
	  year      = {2014},
	  pages     = {607 - 610},
	  ee        = {https://publications.waset.org/pdf/9998686},
	  url   	= {https://publications.waset.org/vol/91},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 91, 2014},
	}