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Resistive RAM Based on Hfox and its Temperature Instability Study

Authors: Z. Fang, H.Y. Yu, W.J. Liu, N. Singh, G.Q. Lo

Abstract:

High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.

Keywords: RRAM, resistive switching, temperature instability.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329865

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