Commenced in January 2007
Paper Count: 30855
Resistive RAM Based on Hfox and its Temperature Instability Study
Abstract:High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329865Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2106
 G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application," in IEDM Tech. Dig., 2005, pp. 750-753.
 D. C. Kim, S. Seo, S. E. Ahn, D. S. Suh, M. J. Lee, B. H. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. I. Chung, J. T. Moon, and B. I. Ryu, "Electrical observations of filamentary conductions for the resistive memory switching in NiO films," Appl. Phys. Lett., vol. 88, p. 202102, May 2006.
 D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, May 2008.
 R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, and H. Hwang, "Reproducible hysteresis and resistive switching in metal- Cux O -metal heterostructures," Appl. Phys. Lett., vol. 90, p. 042107, Jan 2007.
 H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM," in IEDM Tech. Dig., 2008, pp. 297-300.
 N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, "A unified physical model of switching behavior in oxide-based RRAM," in VLSI Symp., 2008, pp. 100-101.
 C. Kittel, "Introduction to solid state physics (8th ed)," pp. 585-591.
 R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, "Oxide dual-layer memory element for scalable nonvolatile cross-point memory technology," in NVMTS Proc., 2008, pp. 1- 5