Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications

Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1335656

References:

[1] R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, vol. 6, pp. 833-840, 2007.
[2] I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application," in Technical Digest - International Electron Devices Meeting, IEDM, 2005, pp. 750-753.
[3] I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon, "Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, 2004, pp. 587-590.
[4] R. Liu, and C. Y. Lu, "A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability," in VLSI Technology, 2007 IEEE Symposium on, 2007, pp. 228-229.
[5] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM," in Technical Digest - International Electron Devices Meeting, IEDM, 2008, pp. 297-300.
[6] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong, "HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity," Electron Device Letters, IEEE, vol. 32, pp. 566-568, 2011.
[7] Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F. Kang, "Temperature instability of resistive switching on HfOx-based RRAM devices," IEEE Electron Device Letters, vol. 31, pp. 476-478, 2010.
[8] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, "A unified physical model of switching behavior in oxide-based RRAM," in Digest of Technical Papers - Symposium on VLSI Technology, 2008, pp. 100-101.