%0 Journal Article
	%A Z. Fang and  H.Y. Yu and  W.J. Liu and  N. Singh and  G.Q. Lo
	%D 2010
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 48, 2010
	%T Resistive RAM Based on Hfox and its Temperature Instability Study
	%U https://publications.waset.org/pdf/1308
	%V 48
	%X High performance Resistive Random Access Memory
(RRAM) based on HfOx has been prepared and its temperature
instability has been investigated in this work. With increasing
temperature, it is found that: leakage current at high resistance state
increases, which can be explained by the higher density of traps
inside dielectrics (related to trap-assistant tunneling), leading to a
smaller On/Off ratio; set and reset voltages decrease, which may be
attributed to the higher oxygen ion mobility, in addition to the
reduced potential barrier to create / recover oxygen ions (or oxygen
vacancies); temperature impact on the RRAM retention degradation
is more serious than electrical bias.
	%P 1836 - 1838