%0 Journal Article %A Hsin-Ping Huang and Shyankay Jou %D 2014 %J International Journal of Chemical and Molecular Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 91, 2014 %T Resistive Switching in TaN/AlNx/TiN Cell %U https://publications.waset.org/pdf/9998686 %V 91 %X Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film. %P 607 - 610