Switching Behaviors of TiN/HfOx/Pt Based RRAM

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfO_x/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Keywords: HfOx, resistive switching, RRAM.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1335632

References:

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