@article{(Open Science Index):https://publications.waset.org/pdf/1308, title = {Resistive RAM Based on Hfox and its Temperature Instability Study}, author = {Z. Fang and H.Y. Yu and W.J. Liu and N. Singh and G.Q. Lo}, country = {}, institution = {}, abstract = {High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.}, journal = {International Journal of Electronics and Communication Engineering}, volume = {4}, number = {12}, year = {2010}, pages = {1836 - 1838}, ee = {https://publications.waset.org/pdf/1308}, url = {https://publications.waset.org/vol/48}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 48, 2010}, }