@article{(Open Science Index):https://publications.waset.org/pdf/16643,
	  title     = {Switching Behaviors of TiN/HfOx/Pt Based RRAM},
	  author    = {B. B. Weng and  Z. Fang and  Z. X. Chen and  X. P. Wang and  G. Q. Lo and  D. L. Kwong},
	  country	= {},
	  institution	= {},
	  abstract     = {Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {9},
	  year      = {2013},
	  pages     = {1148 - 1150},
	  ee        = {https://publications.waset.org/pdf/16643},
	  url   	= {https://publications.waset.org/vol/81},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 81, 2013},