@article{(Open Science Index):https://publications.waset.org/pdf/16643, title = {Switching Behaviors of TiN/HfOx/Pt Based RRAM}, author = {B. B. Weng and Z. Fang and Z. X. Chen and X. P. Wang and G. Q. Lo and D. L. Kwong}, country = {}, institution = {}, abstract = {Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief. }, journal = {International Journal of Electronics and Communication Engineering}, volume = {7}, number = {9}, year = {2013}, pages = {1148 - 1150}, ee = {https://publications.waset.org/pdf/16643}, url = {https://publications.waset.org/vol/81}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 81, 2013}, }