%0 Journal Article
	%A Z. Fang and  X. P. Wang and  G. Q. Lo and  D. L. Kwong
	%D 2013
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 81, 2013
	%T Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications
	%U https://publications.waset.org/pdf/16700
	%V 81
	%X In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

	%P 1227 - 1229