Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 374

Search results for: threshold voltage

374 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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373 Linear Pocket Profile based Threshold Voltage Model for sub-100 nm n-MOSFET

Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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372 A High Precision Temperature Insensitive Current and Voltage Reference Generator

Authors: Kimberly Jane S. Uy, Patricia Angela Reyes-Abu, Wen Yaw Chung

Abstract:

A high precision temperature insensitive current and voltage reference generator is presented. It is specifically developed for temperature compensated oscillator. The circuit, designed using MXIC 0.5um CMOS technology, has an operating voltage that ranges from 2.6V to 5V and generates a voltage of 1.21V and a current of 6.38 ӴA. It exhibits a variation of ±0.3nA for the current reference and a stable output for voltage reference as the temperature is varied from 0°C to 70°C. The power supply rejection ratio obtained without any filtering capacitor at 100Hz and 10MHz is -30dB and -12dB respectively.

Keywords: Current reference, voltage reference, threshold voltage, temperature compensation, mobility.

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371 A ±0.5V BiCMOS Class-A Current Conveyor

Authors: Subodh Thankachan, Manisha Pattanaik, S. S. Rajput

Abstract:

In this paper, a new BiCMOS CCII and CCCII, capable of operate at ±0.5V and having wide dynamic range with achieved bandwidth of 480MHz and 430MHz respectively have been proposed. The structures have been found to be insensitive to the threshold voltage variations. The proposed circuits are suitable for implementation using 0.25μm BiCMOS technology. Pspice simulations confirm the performance of the proposed structures.

Keywords: BiCMOS, Current conveyor, Compound current conveyor, Low supply voltage, Threshold voltage variation.

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370 Reduction of Leakage Power in Digital Logic Circuits Using Stacking Technique in 45 Nanometer Regime

Authors: P.K. Sharma, B. Bhargava, S. Akashe

Abstract:

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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369 Comparative Study of Line Voltage Stability Indices for Voltage Collapse Forecasting in Power Transmission System

Authors: H. H. Goh, Q. S. Chua, S. W. Lee, B. C. Kok, K. C. Goh, K. T. K. Teo

Abstract:

At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices used is to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising.

Keywords: Critical line, line outage, line voltage stability indices (LVSI), maximum loadability, voltage collapse, voltage instability, voltage stability analysis.

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368 Threshold Stress of the Soil Subgrade Evaluation for Highway Formations

Authors: Elsa Eka Putri, N.S.V Kameswara Rao, M. A. Mannan

Abstract:

The objective of this study is to evaluate the threshold stress of the clay with sand subgrade soil. Threshold stress can be defined as the stress level above which cyclic loading leads to excessive deformation and eventual failure. The thickness determination of highways formations using the threshold stress approach is a more realistic assessment of the soil behaviour because it is subjected to repeated loadings from moving vehicles. Threshold stress can be evaluated by plastic strain criterion, which is based on the accumulated plastic strain behaviour during cyclic loadings [1]. Several conditions of the all-round pressure the subgrade soil namely, zero confinement, low all-round pressure and high all-round pressure are investigated. The threshold stresses of various soil conditions are determined. Threshold stress of the soil are 60%, 31% and 38.6% for unconfined partially saturated sample, low effective stress saturated sample, high effective stress saturated sample respectively.

Keywords: threshold stress, cyclic loading, pore water pressure.

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367 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage

Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

Abstract:

The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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366 Threshold Submergence of Flow over PK Weirs

Authors: A. Javaheri, A. R. Kabiri-Samani

Abstract:

In this study an extensive experimental research is carried out to develop a better understanding of the effects of Piano Key (PK) weir geometry on weir flow threshold submergence. Experiments were conducted in a 12 m long, 0.4 m wide and 0.7 m deep rectangular glass wall flume. The main objectives were to investigate the effect of the PK weir geometries including the weir length, weir height, inlet-outlet key widths, upstream and downstream apex overhangs, and slopped floors on threshold submergence and study the hydraulic flow characteristics. From the experimental results, a practical formula is proposed to evaluate the flow threshold submergence over PK weirs.

Keywords: Model experimentation, flow characteristics, Piano Key weir, threshold submergence.

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365 Noise-Improved Signal Detection in Nonlinear Threshold Systems

Authors: Youguo Wang, Lenan Wu

Abstract:

We discuss the signal detection through nonlinear threshold systems. The detection performance is assessed by the probability of error Per . We establish that: (1) when the signal is complete suprathreshold, noise always degrades the signal detection both in the single threshold system and in the parallel array of threshold devices. (2) When the signal is a little subthreshold, noise degrades signal detection in the single threshold system. But in the parallel array, noise can improve signal detection, i.e., stochastic resonance (SR) exists in the array. (3) When the signal is predominant subthreshold, noise always can improve signal detection and SR always exists not only in the single threshold system but also in the parallel array. (4) Array can improve signal detection by raising the number of threshold devices. These results extend further the applicability of SR in signal detection.

Keywords: Probability of error, signal detection, stochasticresonance, threshold system.

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364 Modeling and Simulation of Dynamic Voltage Restorer for Mitigation of Voltage Sags

Authors: S. Ganesh, L. Raguraman, E. Anushya, J. krishnasree

Abstract:

Voltage sags are the most common power quality disturbance in the distribution system. It occurs due to the fault in the electrical network or by the starting of a large induction motor and this can be solved by using the custom power devices such as Dynamic Voltage Restorer (DVR). In this paper DVR is proposed to compensate voltage sags on critical loads dynamically. The DVR consists of VSC, injection transformers, passive filters and energy storage (lead acid battery). By injecting an appropriate voltage, the DVR restores a voltage waveform and ensures constant load voltage. The simulation and experimental results of a DVR using MATLAB software shows clearly the performance of the DVR in mitigating voltage sags.

Keywords: Dynamic voltage restorer, Voltage sags, Power quality, Injection methods.

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363 Analysis of Linked in Series Servers with Blocking, Priority Feedback Service and Threshold Policy

Authors: Walenty Oniszczuk

Abstract:

The use of buffer thresholds, blocking and adequate service strategies are well-known techniques for computer networks traffic congestion control. This motivates the study of series queues with blocking, feedback (service under Head of Line (HoL) priority discipline) and finite capacity buffers with thresholds. In this paper, the external traffic is modelled using the Poisson process and the service times have been modelled using the exponential distribution. We consider a three-station network with two finite buffers, for which a set of thresholds (tm1 and tm2) is defined. This computer network behaves as follows. A task, which finishes its service at station B, gets sent back to station A for re-processing with probability o. When the number of tasks in the second buffer exceeds a threshold tm2 and the number of task in the first buffer is less than tm1, the fed back task is served under HoL priority discipline. In opposite case, for fed backed tasks, “no two priority services in succession" procedure (preventing a possible overflow in the first buffer) is applied. Using an open Markovian queuing schema with blocking, priority feedback service and thresholds, a closed form cost-effective analytical solution is obtained. The model of servers linked in series is very accurate. It is derived directly from a twodimensional state graph and a set of steady-state equations, followed by calculations of main measures of effectiveness. Consequently, efficient expressions of the low computational cost are determined. Based on numerical experiments and collected results we conclude that the proposed model with blocking, feedback and thresholds can provide accurate performance estimates of linked in series networks.

Keywords: Blocking, Congestion control, Feedback, Markov chains, Performance evaluation, Threshold-base networks.

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362 A New Shock Model for Systems Subject to Random Threshold Failure

Authors: A. Rangan, A. Tansu

Abstract:

This paper generalizes Yeh Lam-s shock model for renewal shock arrivals and random threshold. Several interesting statistical measures are explicitly obtained. A few special cases and an optimal replacement problem are also discussed.

Keywords: shock model, optimal replacement, random threshold, shocks.

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361 C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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360 Application of Voltage Stability Indices for Proper Placement of STATCOM under Load Increase Scenario

Authors: A. S. Telang, P. P. Bedekar

Abstract:

In today’s world, electrical energy has become an indispensable component of all aspects of modern human life. Reliability, security and stability are the key aspects of any power system. Failure to meet any of these three aspects results into a great impediment to modern life. Modern power systems are being subjected to heavily stressed conditions leading to voltage stability problems. If the voltage stability problems are not mitigated properly through proper voltage stability assessment methods, cascading events may occur which may lead to voltage collapse or blackout events. Modern FACTS devices like STATCOM are one of the measures to overcome the blackout problems. As these devices are very costly, they must be installed properly at suitable locations, mostly at weak bus. Line voltage stability indices such as FVSI, Lmn and LQP play important role for identification of a weak bus. This paper presents evaluation of these line stability indices for the assessment of reliable information about the closeness of the power system to voltage collapse. PSAT is a user-friendly MATLAB toolbox, of which CPF is an important feature which has been extensively used for the placement of STATCOM to assess the stability. Novelty of the present research work lies in that the active and reactive load has been changed simultaneously at all the load buses under consideration. MATLAB code has been developed for the same and tested successfully on various standard IEEE test systems. The results for standard IEEE14 bus test system, specifically, are presented in this paper.

Keywords: Voltage stability analysis, voltage collapse, PSAT, CPF, VSI, FVSI, Lmn, LQP.

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359 Determining of Threshold Levels of Burst by Burst AQAM/CDMA in Slow Rayleigh Fading Environments

Authors: F. Nejadebrahimi, M. ArdebiliPour

Abstract:

In this paper, we are going to determine the threshold levels of adaptive modulation in a burst by burst CDMA system by a suboptimum method so that the above method attempts to increase the average bit per symbol (BPS) rate of transceiver system by switching between the different modulation modes in variable channel condition. In this method, we choose the minimum values of average bit error rate (BER) and maximum values of average BPS on different values of average channel signal to noise ratio (SNR) and then calculate the relative threshold levels of them, so that when the instantaneous SNR increases, a higher order modulation be employed for increasing throughput and vise-versa when the instantaneous SNR decreases, a lower order modulation be employed for improvement of BER. In transmission step, by this adaptive modulation method, in according to comparison between obtained estimation of pilot symbols and a set of above suboptimum threshold levels, above system chooses one of states no transmission, BPSK, 4QAM and square 16QAM for modulation of data. The expected channel in this paper is a slow Rayleigh fading.

Keywords: AQAM, burst, BER, BPS, CDMA, threshold.

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358 Detection of Voltage Sag and Voltage Swell in Power Quality Using Wavelet Transforms

Authors: Nor Asrina Binti Ramlee

Abstract:

Voltage sag, voltage swell, high-frequency noise and voltage transients are kinds of disturbances in power quality. They are also known as power quality events. Equipment used in the industry nowadays has become more sensitive to these events with the increasing complexity of equipment. This leads to the importance of distributing clean power quality to the consumer. To provide better service, the best analysis on power quality is very vital. Thus, this paper presents the events detection focusing on voltage sag and swell. The method is developed by applying time domain signal analysis using wavelet transform approach in MATLAB. Four types of mother wavelet namely Haar, Dmey, Daubechies, and Symlet are used to detect the events. This project analyzed real interrupted signal obtained from 22 kV transmission line in Skudai, Johor Bahru, Malaysia. The signals will be decomposed through the wavelet mothers. The best mother is the one that is capable to detect the time location of the event accurately.

Keywords: Power quality, voltage sag, voltage swell, wavelet transform.

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357 Threshold Based Region Incrementing Secret Sharing Scheme for Color Images

Authors: P. Mohamed Fathimal, P. Arockia Jansi Rani

Abstract:

In this era of online communication, which transacts data in 0s and 1s, confidentiality is a priced commodity. Ensuring safe transmission of encrypted data and their uncorrupted recovery is a matter of prime concern. Among the several techniques for secure sharing of images, this paper proposes a k out of n region incrementing image sharing scheme for color images. The highlight of this scheme is the use of simple Boolean and arithmetic operations for generating shares and the Lagrange interpolation polynomial for authenticating shares. Additionally, this scheme addresses problems faced by existing algorithms such as color reversal and pixel expansion. This paper regenerates the original secret image whereas the existing systems regenerates only the half toned secret image.

Keywords: Threshold Secret Sharing Scheme, Access Control, Steganography, Authentication, Secret Image Sharing, XOR, Pixel Expansion.

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356 Choice of Efficient Information System with Service-Oriented Architecture using Multiple Criteria Threshold Algorithms (With Practical Example)

Authors: Irina Pyrlina

Abstract:

Author presents the results of a study conducted to identify criteria of efficient information system (IS) with serviceoriented architecture (SOA) realization and proposes a ranking method to evaluate SOA information systems using a set of architecture quality criteria before the systems are implemented. The method is used to compare 7 SOA projects and ranking result for SOA efficiency of the projects is provided. The choice of SOA realization project depends on following criteria categories: IS internal work and organization, SOA policies, guidelines and change management, processes and business services readiness, risk management and mitigation. The last criteria category was analyzed on the basis of projects statistics.

Keywords: multiple criteria threshold algorithm, serviceoriented architecture, SOA operational risks, efficiency criteria for IS architecture, projects ranking.

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355 Low Voltage High Gain Linear Class AB CMOS OTA with DC Level Input Stage

Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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354 Precipitation Intensity: Duration Based Threshold Analysis for Initiation of Landslides in Upper Alaknanda Valley

Authors: Soumiya Bhattacharjee, P. K. Champati Ray, Shovan L. Chattoraj, Mrinmoy Dhara

Abstract:

The entire Himalayan range is globally renowned for rainfall-induced landslides. The prime focus of the study is to determine rainfall based threshold for initiation of landslides that can be used as an important component of an early warning system for alerting stake holders. This research deals with temporal dimension of slope failures due to extreme rainfall events along the National Highway-58 from Karanprayag to Badrinath in the Garhwal Himalaya, India. Post processed 3-hourly rainfall intensity data and its corresponding duration from daily rainfall data available from Tropical Rainfall Measuring Mission (TRMM) were used as the prime source of rainfall data. Landslide event records from Border Road Organization (BRO) and some ancillary landslide inventory data for 2013 and 2014 have been used to determine Intensity Duration (ID) based rainfall threshold. The derived governing threshold equation, I= 4.738D-0.025, has been considered for prediction of landslides of the study region. This equation was validated with an accuracy of 70% landslides during August and September 2014. The derived equation was considered for further prediction of landslides of the study region. From the obtained results and validation, it can be inferred that this equation can be used for initiation of landslides in the study area to work as a part of an early warning system. Results can significantly improve with ground based rainfall estimates and better database on landslide records. Thus, the study has demonstrated a very low cost method to get first-hand information on possibility of impending landslide in any region, thereby providing alert and better preparedness for landslide disaster mitigation.

Keywords: Landslide, intensity-duration, rainfall threshold, Tropical Rainfall Measuring Mission, slope, inventory, early warning system.

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353 Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance

Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat

Abstract:

In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.

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352 Voltage Stability Proximity Index Determined by LES Algorithm

Authors: Benalia Nadia, Bensiali Nadia, Mekki Mounira

Abstract:

In this paper, we propose an easily computable proximity index for predicting voltage collapse of a load bus using only measured values of the bus voltage and power; Using these measurements a polynomial of fourth order is obtained by using LES estimation algorithms. The sum of the absolute values of the polynomial coefficient gives an idea of the critical bus. We demonstrate the applicability of our proposed method on 6 bus test system. The results obtained verify its applicability, as well as its accuracy and the simplicity. From this indicator, it is allowed to predict the voltage instability or the proximity of a collapse. Results obtained by the PV curve are compared with corresponding values by QV curves and are observed to be in close agreement.

Keywords: least square method, Voltage Collapse, Voltage Stability, PV curve

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351 Continuous Threshold Prey Harvesting in Predator-Prey Models

Authors: Jonathan Bohn, Jorge Rebaza, Kaitlin Speer

Abstract:

The dynamics of a predator-prey model with continuous threshold policy harvesting functions on the prey is studied. Theoretical and numerical methods are used to investigate boundedness of solutions, existence of bionomic equilibria, and the stability properties of coexistence equilibrium points and periodic orbits. Several bifurcations as well as some heteroclinic orbits are computed.

Keywords: Predator-prey models, threshold harvesting, dynamicalsystems

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350 Static Voltage Stability Margin Enhancement Using SVC and TCSC

Authors: Mohammed Amroune, Hadi Sebaa, Tarek Bouktir

Abstract:

Reactive power limit of power system is one of the major causes of voltage instability. The only way to save the system from voltage instability is to reduce the reactive power load or add additional reactive power to reaching the point of voltage collapse. In recent times, the application of FACTS devices is a very effective solution to prevent voltage instability due to their fast and very flexible control. In this paper, voltage stability assessment with SVC and TCSC devices is investigated and compared in the modified IEEE 30-bus test system. The fast voltage stability indicator (FVSI) is used to identify weakest bus and to assess the voltage stability of power system.

Keywords: SVC, TCSC, Voltage stability, Fast Voltage Stability Index (FVSI), Reactive power.

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349 Improving the Voltage Level in High Voltage Direct Current Systems by Using Modular Multilevel Converter

Authors: G. Kishor Babu, B. Madhu Kiran

Abstract:

This paper presented an intend scheme of Modular-Multilevel-Converter (MMC) levels for move towering the practical conciliation flanked by the precision and divisional competence. The whole process is standard by a Thevenin-equivalent 133-level MMC model. Firstly the computation scheme of the fundamental limit imitation time step is offered to faithfully represent each voltage level of waveforms. Secondly the earlier industrial Improved Analytic Hierarchy Process (IAHP) is adopted to integrate the relative errors of all the input electrical factors interested in one complete virtual fault on each converter level. Thirdly the stable AC and DC ephemeral condition in virtual faults effects of all the forms stabilize and curve integral stand on the standard form. Finally the optimal MMC level will be obtained by the drown curves and it will give individual weights allowing for the precision and efficiency. And the competence and potency of the scheme are validated by model on MATLAB Simulink.

Keywords: Modular multilevel converter, improved analytic hierarchy process, ac and dc transient, high voltage direct current, voltage sourced converter.

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348 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, voltage transition, node stabilization, and biasing circuits.

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347 Performance Analysis of an Adaptive Threshold Hybrid Double-Dwell System with Antenna Diversity for Acquisition in DS-CDMA Systems

Authors: H. Krouma, M. Barkat, K. Kemih, M. Benslama, Y. Yacine

Abstract:

In this paper, we consider the analysis of the acquisition process for a hybrid double-dwell system with antenna diversity for DS-CDMA (direct sequence-code division multiple access) using an adaptive threshold. Acquisition systems with a fixed threshold value are unable to adapt to fast varying mobile communications environments and may result in a high false alarm rate, and/or low detection probability. Therefore, we propose an adaptively varying threshold scheme through the use of a cellaveraging constant false alarm rate (CA-CFAR) algorithm, which is well known in the field of radar detection. We derive exact expressions for the probabilities of detection and false alarm in Rayleigh fading channels. The mean acquisition time of the system under consideration is also derived. The performance of the system is analyzed and compared to that of a hybrid single dwell system.

Keywords: Adaptive threshold, hybrid double-dwell system, CA-CFAR algorithm, DS-CDMA.

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346 Multi-threshold Approach for License Plate Recognition System

Authors: Siti Norul Huda Sheikh Abdullah, Farshid Pirahan Siah, Nor Hanisah Haji Zainal Abidin, Shahnorbanun Sahran

Abstract:

The objective of this paper is to propose an adaptive multi threshold for image segmentation precisely in object detection. Due to the different types of license plates being used, the requirement of an automatic LPR is rather different for each country. The proposed technique is applied on Malaysian LPR application. It is based on Multi Layer Perceptron trained by back propagation. The proposed adaptive threshold is introduced to find the optimum threshold values. The technique relies on the peak value from the graph of the number object versus specific range of threshold values. The proposed approach has improved the overall performance compared to current optimal threshold techniques. Further improvement on this method is in progress to accommodate real time system specification.

Keywords: Multi-threshold approach, license plate recognition system.

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345 Effects of Tap Changing Transformer and Shunt Capacitor on Voltage Stability Enhancement of Transmission Networks

Authors: Pyone Lai Swe, Wanna Swe, Kyaw Myo Lin

Abstract:

Voltage stability has become an important issue to many power systems around the world due to the weak systems and long line on power system networks. In this paper, MATLAB load flow program is applied to obtain the weak points in the system combined with finding the voltage stability limit. The maximum permissible loading of a system, within the voltage stability limit, is usually determined. The methods for varying tap ratio (using tap changing transformer) and applying different values of shunt capacitor injection to improve the voltage stability within the limit are also provided.

Keywords: Load flow, Voltage stability, Tap changingtransformer, Shunt capacitor injection, Voltage stability limit

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