Ashwani K. Rana and Narottam Chand and Vinod Kapoor, A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime. journal = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. October 2011, vol. 58(10). 1132 - 1138 [viewed 26 April 2024]. Available from: https://publications.waset.org/pdf/3314.