Z. Fang and  X. P. Wang and  G. Q. Lo and  D. L. Kwong,  Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    September 2013, vol. 81(9). 1227 - 1229
    [viewed 19 April 2024]. Available from: https://publications.waset.org/pdf/16700.