@article{(Open Science Index):https://publications.waset.org/pdf/16700,
	  title     = {Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications},
	  author    = {Z. Fang and  X. P. Wang and  G. Q. Lo and  D. L. Kwong},
	  country	= {},
	  institution	= {},
	  abstract     = {In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {9},
	  year      = {2013},
	  pages     = {1227 - 1229},
	  ee        = {https://publications.waset.org/pdf/16700},
	  url   	= {https://publications.waset.org/vol/81},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 81, 2013},
	}