%0 Journal Article %A B. B. Weng and Z. Fang and Z. X. Chen and X. P. Wang and G. Q. Lo and D. L. Kwong %D 2013 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 81, 2013 %T Switching Behaviors of TiN/HfOx/Pt Based RRAM %U https://publications.waset.org/pdf/16643 %V 81 %X Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief. %P 1148 - 1150