%0 Journal Article
	%A B. B. Weng and  Z. Fang and  Z. X. Chen and  X. P. Wang and  G. Q. Lo and  D. L. Kwong
	%D 2013
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 81, 2013
	%T Switching Behaviors of TiN/HfOx/Pt Based RRAM
	%U https://publications.waset.org/pdf/16643
	%V 81
	%X Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

	%P 1148 - 1150