Search results for: High-k gate dielectrics

Authors: D. Krishnaveni, M. Geetha Priya

Abstract:

Application of reversible logic in integrated circuits results in the improved optimization of power consumption. This technology can be put into use in a variety of low power applications such as quantum computing, optical computing, nano-technology, and Complementary Metal Oxide Semiconductor (CMOS) Very Large Scale Integrated (VLSI) design etc. Logic gates are the basic building blocks in the design of any logic network and thus integrated circuits. In this paper, reversible Dual Key Gate (DKG) and Dual key Gate Pair (DKGP) gates that work singly as full adder/full subtractor are used to realize the basic building blocks of logic circuits. Reversible full adder/subtractor and parallel adder/ subtractor are designed using other reversible gates available in the literature and compared with that of DKG & DKGP gates. Efficient performance of reversible logic circuits relies on the optimization of the key parameters viz number of constant inputs, garbage outputs and number of reversible gates. The full adder/subtractor and parallel adder/subtractor design with reversible DKGP and DKG gates results in least number of constant inputs, garbage outputs, and number of reversible gates compared to the other designs. Thus, this paper provides a threshold to build more complex arithmetic systems using these reversible logic gates, leading to the enhanced performance of computing systems.

Keywords: Low power CMOS, quantum computing, reversible logic gates, full adder, full subtractor, parallel adder/subtractor, basic gates, universal gates.

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Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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Authors: A. Thabet, M. Repetto

Abstract:

Dielectric materials play an important role in broad applications, such as electrical and electromagnetic applications. This research studied the prediction of effective permeability of composite and nanocomposite dielectric materials based on theoretical analysis to specify the effects of embedded magnetic inclusions in enhancing magnetic properties of dielectrics. Effective permeability of Plastics and Glass nanodielectrics have been predicted with adding various types and percentages of magnetic nano-particles (Fe, Ni-Cu, Ni-Fe, MgZn_Ferrite, NiZn_Ferrite) for formulating new nanodielectric magnetic industrial materials. Soft nanoparticles powders that have been used in new nanodielectrics often possess the structure of a particle size in the range of micrometer- to nano-sized grains and magnetic isotropy, e.g., a random distribution of magnetic easy axes of the nanograins. It has been succeeded for enhancing characteristics of new nanodielectric magnetic industrial materials. The results have shown a significant effect of inclusions distribution on the effective permeability of nanodielectric magnetic composites, and so, explained the effect of magnetic inclusions types and their concentration on the effective permeability of nanodielectric magnetic materials.

Keywords: Nanoparticles, Nanodielectrics, Nanocomposites, Effective Permeability, Magnetic Properties.

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Authors: Z. Harouni, L. Osman, M. Yeddes, A. Gharsallah, H. Baudrand

Abstract:

In this paper, an efficient wave concept iterative process (WCIP) with auxiliary Sources is presented for full wave investigation of an active microwave structure on micro strip technology. Good agreement between the experimental and simulation results is observed.

Keywords: WCIP, Dual-Gate Transistor, Auxiliary source.

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Authors: Shibesh Dutta, Sivaramakrishnan R., Sundar Gopalan, Balakrishnan Shankar

Abstract:

MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.

Keywords: breakdown, MOSCAP, voltage stress.

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Authors: Mohd Tarmizi Ali, Mohd Khairul Mohd Salleh, Md. Mahfudz Md. Zan

Abstract:

Dielectric sheet perturbation to the dominant TE111 mode resonant frequency of a circular cavity is studied and presented in this paper. The dielectric sheet, placed at the middle of the airfilled cavity, introduces discontinuities and disturbs the configuration of electromagnetic fields in the cavity. For fixed dimensions of cavity and fixed thickness of the loading dielectric, the dominant resonant frequency varies quite linearly with the permittivity of the dielectric. This quasi-linear relationship is plotted using Maple software and verified using 3D electromagnetic simulations. Two probes are used in the simulation for wave excitation into and from the cavity. The best length of probe is found to be 3 mm, giving the closest resonant frequency to the one calculated using Maple. A total of fourteen different dielectrics of permittivity ranging from 1 to 12.9 are tested one by one in the simulation. The works show very close agreement between the results from Maple and the simulation. A constant difference of 0.04 GHz is found between the resonant frequencies collected during simulation and the ones from Maple. The success of this project may lead to the possibility of using the middle loaded cavity at TE111 mode as a microwave non-destructive testing of solid materials.

Keywords: Middle-loaded cavity, dielectric sheet perturbation.

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Authors: Alloysius C. Ogodo, Ositadinma C. Ugbogu, Uzochukwu G. Ekeleme

Abstract:

Food poisoning and infection by bacteria are of public health significance to both developing and developed countries. Samples of ogi (akamu) prepared from white and yellow variety of maize sold in Uturu and Okigwe were analyzed together with the laboratory prepared ogi for bacterial quality using the standard microbiological methods. The analyses showed that both white and yellow variety had total bacterial counts (cfu/g) of 4.0 ×107 and 3.9 x 107 for the laboratory prepared ogi while the commercial ogi had 5.2 x 107 and 4.9 x107, 4.9 x107 and 4.5 x107, 5.4 x107 and 5.0 x107 for Eke-Okigwe, Up-gate and Nkwo-Achara market respectively. The Staphylococcal counts ranged from 2.0 x 102 to 5.0 x102 and 1.0 x 102 to 4.0 x102 for the white and yellow variety from the different markets while Staphylococcal growth was not recorded on the laboratory prepared ogi. The laboratory prepared ogi had no Coliform growth while the commercially prepared ogi had counts of 0.5 x103 to 1.6 x 103 for white variety and 0.3 x 103 to 1.1 x103 for yellow variety respectively. The Lactic acid bacterial count of 3.5x106 and 3.0x106 was recorded for the laboratory ogi while the commercially prepared ogi ranged from 3.2x106 to 4.2x106 (white variety) and 3.0 x106 to 3.9 x106 (yellow). The presence of bacteria isolates from the commercial and laboratory fermented ogi showed that Lactobacillus sp, Leuconostoc sp and Citrobacter sp were present in all the samples, Micrococcus sp and Klebsiella sp were isolated from Eke- Okigwe and ABSU-up-gate markets varieties respectively, E. coli and Staphylococcus sp were present in Eke-Okigwe and Nkwo- Achara markets while Salmonella sp were isolated from the three markets. Hence, there are chances of contracting food borne diseases from commercially prepared ogi. Therefore, there is the need for sanitary measures in the production of fermented cereals so as to minimize the rate of food borne pathogens during processing and storage.

Keywords: Bacterial quality, fermentation, maize, Ogi.

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Authors: Y. J. Huang, J. D. Yu, B. W. Hong, C. H. Tai, T. C. Kuo

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In this paper, a multi-agent robot system is presented. The system consists of four robots. The developed robots are able to automatically enter and patrol a harmful environment, such as the building infected with virus or the factory with leaking hazardous gas. Further, every robot is able to perform obstacle avoidance and search for the victims. Several operation modes are designed: remote control, obstacle avoidance, automatic searching, and so on.

Keywords: autonomous robot, field programmable gate array, obstacle avoidance, ultrasonic sensor, wireless communication.

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Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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Authors: Jaouadi Ikram, Machhout Mohsen

Abstract:

The development of a quantum key distribution (QKD) system on a field-programmable gate array (FPGA) platform is the subject of this paper. A quantum cryptographic protocol is designed based on the properties of quantum information and the characteristics of FPGAs. The proposed protocol performs key extraction, reconciliation, error correction, and privacy amplification tasks to generate a perfectly secret final key. We modeled the presence of the spy in our system with a strategy to reveal some of the exchanged information without being noticed. Using an FPGA card with a 100 MHz clock frequency, we have demonstrated the evolution of the error rate as well as the amounts of mutual information (between the two interlocutors and that of the spy) passing from one step to another in the key generation process.

Keywords: QKD, BB84, protocol, cryptography, FPGA, key, security, communication.

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Authors: Li Yuan, Weizhu Wang, Kean Boon Lee, Haifeng Sun, Susai Lawrence Selvaraj, Shane Todd, Guo-Qiang Lo

Abstract:

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement.

Keywords: AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation

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Authors: Kar Foo Chong, Pradeep K. Gopalakrishnan, T. Hui Teo

Abstract:

There are multiple ways to implement a decimator filter. This paper addresses usage of CIC (cascaded-integrator-comb) filter and HB (half band) filter as the decimator filter to reduce the frequency sample rate by factor of 64 and detail of the implementation step to realize this design in hardware. Low power design approach for CIC filter and half band filter will be discussed. The filter design is implemented through MATLAB system modeling, ASIC (application specific integrated circuit) design flow and verified using a FPGA (field programmable gate array) board and MATLAB analysis.

Keywords: CIC filter, decimation filter, half-band filter, lowpower.

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Authors: Tim Byrnes

Abstract:

Quantum computation using qubits made of two component Bose-Einstein condensates (BECs) is analyzed. We construct a general framework for quantum algorithms to be executed using the collective states of the BECs. The use of BECs allows for an increase of energy scales via bosonic enhancement, resulting in two qubit gate operations that can be performed at a time reduced by a factor of N, where N is the number of bosons per qubit. We illustrate the scheme by an application to Deutsch-s and Grover-s algorithms, and discuss possible experimental implementations. Decoherence effects are analyzed under both general conditions and for the experimental implementation proposed.

Keywords: Quantum, computing, information, Bose-Einstein condensates, macroscopic.

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Authors: P. Jelodarian , E. Farshidi

Abstract:

In this paper, a new approach for design of a fully differential second order current mode continuous-time sigma-delta modulator is presented. For circuit implementation, square root domain (SRD) translinear loop based on floating-gate MOS transistors that operate in saturation region is employed. The modulator features, low supply voltage, low power consumption (8mW) and high dynamic range (55dB). Simulation results confirm that this design is suitable for data converters.

Keywords: Sigma-delta, current-mode, translinear loop, geometric mean, squarer/divider.

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Authors: M. Kovac

Abstract:

This article describes design of the 8-bit asynchronous microcontroller simulation model in VHDL. The model is created in ISE Foundation design tool and simulated in Modelsim tool. This model is a simple application example of asynchronous systems designed in synchronous design tools. The design process of creating asynchronous system with 4-phase bundled-data protocol and with matching delays is described in the article. The model is described in gate-level abstraction. The simulation waveform of the functional construction is the result of this article. Described construction covers only the simulation model. The next step would be creating synthesizable model to FPGA.

Keywords: Asynchronous, Microcontroller, VHDL, FPGA.

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Authors: Seung-Mok Han, Woo-Jin Nam, Seongsoo Lee

Abstract:

This paper proposes and implements an core transform architecture, which is one of the major processes in HEVC video compression standard. The proposed core transform architecture is implemented with only adders and shifters instead of area-consuming multipliers. Shifters in the proposed core transform architecture are implemented in wires and multiplexers, which significantly reduces chip area. Also, it can process from 4×4 to 16×16 blocks with common hardware by reusing processing elements. Designed core transform architecture in 0.13um technology can process a 16×16 block with 2-D transform in 130 cycles, and its gate count is 101,015 gates.

Keywords: HEVC, Core transform, Low area, Shift-and-add, PE reuse

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Authors: Yong-Seo Koo, Jin-Woo Jung, Byung-Seok Lee, Dong-Su Kim, Yil-Suk Yang

Abstract:

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.

Keywords: ESD Protection, grounded gate NMOS (GGNMOS), low trigger voltage SCR (LVTSCR)

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Authors: Nasir Mehmood, Jens Ogniewski, Vinodh Ravinath

Abstract:

This paper describes the design of a real-time audiorange digital oscilloscope and its implementation in 90nm CMOS FPGA platform. The design consists of sample and hold circuits, A/D conversion, audio and video processing, on-chip RAM, clock generation and control logic. The design of internal blocks and modules in 90nm devices in an FPGA is elaborated. Also the key features and their implementation algorithms are presented. Finally, the timing waveforms and simulation results are put forward.

Keywords: CMOS, VLSI, Oscilloscope, Field Programmable Gate Array (FPGA), VHDL, Video Graphics Array (VGA)

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Authors: Y. Bentoutou

Abstract:

Memory Errors Detection and Correction aim to secure the transaction of data between the central processing unit of a satellite onboard computer and its local memory. In this paper, the application of a double-bit error detection and correction method is described and implemented in Field Programmable Gate Array (FPGA) technology. The performance of the proposed EDAC method is measured and compared with two different EDAC devices, using the same FPGA technology. Statistical analysis of single-event upset (SEU) and multiple-bit upset (MBU) activity in commercial memories onboard the first Algerian microsatellite Alsat-1 is given.

Keywords: Error Detection and Correction, On-board computer, small satellite missions.

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Authors: M. Mashayekhi, H. H. Ardakani, A. Omidian

Abstract:

Among various testing methodologies, Built-in Self- Test (BIST) is recognized as a low cost, effective paradigm. Also, full adders are one of the basic building blocks of most arithmetic circuits in all processing units. In this paper, an optimized testable 2- bit full adder as a test building block is proposed. Then, a BIST procedure is introduced to scale up the building block and to generate a self testable n-bit full adders. The target design can achieve 100% fault coverage using insignificant amount of hardware redundancy. Moreover, Overall test time is reduced by utilizing polymorphic gates and also by testing full adder building blocks in parallel.

Keywords: BIST, Full Adder, Polymorphic Gate

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

Abstract:

In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: Nelson K. Lujara

Abstract:

The paper presents a practical three-phase PWM inverter suitable for low voltage, low rating energy efficient systems. The work in the paper is conducted with the view to establishing the significance of the loss contribution from the PWM inverter in the determination of the complete losses of a photovoltaic (PV) arraypowered induction motor drive water pumping system. Losses investigated include; conduction and switching loss of the devices and gate drive losses. It is found that the PWM inverter operates at a reasonable variable efficiency that does not fall below 92% depending on the load. The results between the simulated and experimental results for the system with or without a maximum power tracker (MPT) compares very well, within an acceptable range of 2% margin.

Keywords: Energy, Inverter, Losses, Photovoltaic.

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Authors: E. Farshidi

Abstract:

This paper presents the design of a low power second-order continuous-time sigma-delta modulator for low power applications. The loop filter of this modulator has been implemented based on the nonlinear transconductance-capacitor (Gm-C) by employing current-mode technique. The nonlinear transconductance uses floating gate MOS (FG-MOS) transistors that operate in weak inversion region. The proposed modulator features low power consumption (<80uW), low supply voltage (1V) and 62dB dynamic range. Simulation results by HSPICE confirm that it is very suitable for low power biomedical instrumentation designs.

Keywords: Sigma-delta, modulator, Current-mode, Nonlinear Transconductance, FG-MOS.

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Authors: Abdelghani Dendouga, Nour-Eddine Bouguechal, Souhil Kouda, Samir Barra

Abstract:

A behavioral model of a second order switchedcapacitor Sigma-Delta modulator is presented. The purpose of this work is the presentation of a behavioral model of a second order switched capacitor ΣΔ modulator considering (Error due to Clock Jitter, Thermal noise Amplifier Noise, Amplifier Slew-Rate, Non linearity of amplifiers, Gain error, Charge Injection, Clock Feedthrough, and Nonlinear on-resistance). A comparison between the use of MOS switches and the use transmission gate switches use is analyzed.

Keywords: Charge injection, clock feed through, Sigma Deltamodulators, Sigma Delta non-idealities, switched capacitor.

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Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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Authors: M. Jagabar Sathik, K. Ramani

Abstract:

In this paper family of multilevel inverter topology with reduced number of power switches is presented. The proposed inverter can generate both even and odd level. The proposed topology is suitable for symmetric structure. The proposed symmetric inverter results in reduction of power switches, power diode and gate driver circuits and also it may further minimize the installation area and cost. To prove the superiority of proposed topology is compared with conventional topologies. The performance of this symmetric multilevel inverter has been tested by computer based simulation and prototype based experimental setup for nine-level inverter is developed and results are verified.

Keywords: Cascaded H- Bridge (CHB), Multilevel Inverter (MLI), Nearest Level Modulation (NLM), Total Harmonic Distortion (THD).

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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Authors: Mazhar B. Tayel, Amr H. Yassin

Abstract:

A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.

Keywords: PHEMT, Genetic Algorithms, small signal modeling, optimization.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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