%0 Journal Article
	%A N. Shen and  Z. X. Chen and  K.D. Buddharaju and  H. M. Chua and  X. Li and  N. Singh and  G.Q Lo and  D.-L. Kwong
	%D 2010
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 48, 2010
	%T Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters
	%U https://publications.waset.org/pdf/8846
	%V 48
	%X In this paper, we present a vertical wire NMOS
device fabricated using CMOS compatible processes. The
impact of temperature on various device parameters is
investigated in view of usual increase in surrounding
temperature with device density.
	%P 1880 - 1883