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High Speed and Ultra Low-voltage CMOS NAND and NOR Domino Gates
Authors: Yngvar Berg, Omid Mirmotahari
Abstract:
In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.
Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329190
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