@article{(Open Science Index):https://publications.waset.org/pdf/17367,
	  title     = {A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices},
	  author    = {A. Karsenty and  A. Chelly},
	  country	= {},
	  institution	= {},
	  abstract     = {Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.
},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {7},
	  number    = {1},
	  year      = {2013},
	  pages     = {66 - 70},
	  ee        = {https://publications.waset.org/pdf/17367},
	  url   	= {https://publications.waset.org/vol/73},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 73, 2013},
	}