@article{(Open Science Index):https://publications.waset.org/pdf/8846,
	  title     = {Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters},
	  author    = {N. Shen and  Z. X. Chen and  K.D. Buddharaju and  H. M. Chua and  X. Li and  N. Singh and  G.Q Lo and  D.-L. Kwong},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, we present a vertical wire NMOS
device fabricated using CMOS compatible processes. The
impact of temperature on various device parameters is
investigated in view of usual increase in surrounding
temperature with device density.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {4},
	  number    = {12},
	  year      = {2010},
	  pages     = {1880 - 1883},
	  ee        = {https://publications.waset.org/pdf/8846},
	  url   	= {https://publications.waset.org/vol/48},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 48, 2010},
	}