%0 Journal Article %A Shibesh Dutta and Sivaramakrishnan R. and Sundar Gopalan and Balakrishnan Shankar %D 2009 %J International Journal of Materials and Metallurgical Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 34, 2009 %T Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs %U https://publications.waset.org/pdf/16005 %V 34 %X MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress. %P 555 - 557