%0 Journal Article
	%A Hai-Qing Xie and  Yun Zeng and  Yong-Hong Yan and  Guo-Liang Zhang and  Tai-Hong Wang
	%D 2009
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 34, 2009
	%T Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET
	%U https://publications.waset.org/pdf/12010
	%V 34
	%X We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

	%P 813 - 817