%0 Journal Article
	%A A. Karsenty and  A. Chelly
	%D 2013
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 73, 2013
	%T A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices
	%U https://publications.waset.org/pdf/17367
	%V 73
	%X Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

	%P 66 - 70