@article{(Open Science Index):https://publications.waset.org/pdf/13284, title = {Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms}, author = {Mazhar B. Tayel and Amr H. Yassin}, country = {}, institution = {}, abstract = {A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz. }, journal = {International Journal of Electrical and Computer Engineering}, volume = {3}, number = {2}, year = {2009}, pages = {314 - 317}, ee = {https://publications.waset.org/pdf/13284}, url = {https://publications.waset.org/vol/26}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 26, 2009}, }