TY - JFULL AU - Shibesh Dutta and Sivaramakrishnan R. and Sundar Gopalan and Balakrishnan Shankar PY - 2009/11/ TI - Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs T2 - International Journal of Materials and Metallurgical Engineering SP - 554 EP - 557 VL - 3 SN - 1307-6892 UR - https://publications.waset.org/pdf/16005 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 34, 2009 N2 - MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress. ER -