Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET
We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1078358Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 970
 SM Csutak, JD Schaub, WE Wu, R Shimer, JC Campbell, "CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates," IEEE J Quantum Electron, vol.38, pp.193-196, Feb 2002.
 Lin Kea, Xin Yue Zhaoa, Ramadas Senthil Kumara and Soo Jin Chua, "Low frequency optical noise from organic light emitting diode," Solid-State Electronics, vol.52, pp.7-10, Jan 2008.
 S Nakaharai, T Tezuka, N Hirashita, E Toyoda, Y Moriyama, N Sugiyama, et al "The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process," Semiconductor science and technology, vol. 22, pp. 26-28, Jan 2007.
 K. Wang, Y. Vygranenko and A. Nathan, "Optically transparent ZnO-based n-i-p ultraviolet photodetectors," Thin Solid Films, vol.515, pp. 6981-6985, June 2007.
 HS Wong, Y Heights, " Technology and device scaling considerations for CMOS imagers,"IEEE Trans.Electron Devices, vol.43, pp.2131-2142, Dec 1996
 Nh Zhu, Y Liu, SJ Zhang, JM Wen, "Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices," Microwave and Optical Technology Letters, vol.48, pp. 76-79, Jan 2006.
 Y. W. Park and S. Rhee, "Study of a line width estimation model for laser micro material processing using a photodiode," Optics & Laser Technology, vol.39, pp. 1461-1471, July 2007.
 S. D. Gunapala, S. V. Bandara, J. K. Liu, E. M. Luong, S. B. Rafol, J. M. Mumolo, D. Z. Ting, et al, "Quantum well infrared photodetector research and development at Jet Propulsion Laboratory" Infrared Physics & Technology, vol.50, pp.211-216, Feb 2007.
 A. J. Blanksby, M. J. Loinaz, "Performance analysis of a color CMOS photogate image sensor," IEEE Trans ,Electron Devices, vol.47, pp. 55-64, Jan 2000.
 F├íbio Alencar Mendon├ºa, Rubens Viana Ramos, "Optical receiver for instrumentation and communication," Microwave and Optical Technology Letters, vol. 45, pp. 415-419, May 2005.
 ATLAS Users Manual, SILVACA, Inc.,Santa Clara, CA, 2003
 A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis , F. Templier, M. Oudwan et al, "Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors," J. Appl. Phys, vol.100, pp.114-117, Dec 2006.