Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs
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Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs

Authors: Shibesh Dutta, Sivaramakrishnan R., Sundar Gopalan, Balakrishnan Shankar

Abstract:

MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.

Keywords: breakdown, MOSCAP, voltage stress.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1086229

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[1] G. D. Wilk, R. M. Wallace, J. M. Anthony, High-k gate dielectrics: Current status and materials properties Considerations, J. Appl. Phys., Vol. 89, No. 10, 15 May 2001.
[2] H.R. Huff, A. Hou, C. Lim, Y. Kim, J. Barnett, G. Bersuker, G.A. Brown, C.D. Young, P.M. Zeitzoff, P. Lysaght, M.I. Gardner, R.W. Murto, High-k gate stacks for planar, scaled CMOS integrated circuits, Microelectronic Engineering 69 (2003) 152¶Çé▒167.
[3] Byoung Hun Lee, Jungwoo Oh, Hsing Huang Tseng, Rajarao Jammy, and Howard Huff, Gate stack technology for nanoscale devices, Materials Today, UNE 2006 | VOLUME 9 | NUMBER 6.
[4] J. Kwoa, M. Honga, B. Buschb, D.A. Mullerc, Y.J. Chabala, A.R. Kortanc, J.P. Mannaertsa, B. Yanga, P. Yea, H. Gossmanna, A.M. Sergentc, K.K. Nga, J. Budea, W.H. Schulted, E. Garfunkeld, T. Gustafsson, Advances in high k gate dielectrics for Si and III-V Semiconductors, Journal of Crystal Growth 251 (2003) 645¶Çé▒650.
[5] G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Parthasarathy, E. Vincent, and G. Ghibaudo, Review on High-k Dielectrics Reliability Issues, IEEE Transactions On Device And Materials Reliability, Vol. 5, No. 1, March 2005.