@article{(Open Science Index):https://publications.waset.org/pdf/12010,
	  title     = {Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET},
	  author    = {Hai-Qing Xie and  Yun Zeng and  Yong-Hong Yan and  Guo-Liang Zhang and  Tai-Hong Wang},
	  country	= {},
	  institution	= {},
	  abstract     = {We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {3},
	  number    = {10},
	  year      = {2009},
	  pages     = {813 - 817},
	  ee        = {https://publications.waset.org/pdf/12010},
	  url   	= {https://publications.waset.org/vol/34},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 34, 2009},
	}