@article{(Open Science Index):https://publications.waset.org/pdf/2647,
	  title     = {On the Operation Mechanism and Device Modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs)},
	  author    = {Li Yuan and  Weizhu Wang and  Kean Boon Lee and  Haifeng Sun and  Susai Lawrence Selvaraj and  Shane Todd and 
Guo-Qiang Lo},
	  country	= {},
	  institution	= {},
	  abstract     = {In this work, the physical based device model of
AlGaN/GaN high electron mobility transistors (HEMTs) has been
established and the corresponding device operation behavior has
been investigated also by using Sentaurus TCAD from Synopsys.
Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN
spacer have been considered and the GaN cap layer and AlN spacer
are found taking important roles on the gate leakage blocking and
off-state breakdown voltage enhancement.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {6},
	  number    = {9},
	  year      = {2012},
	  pages     = {910 - 913},
	  ee        = {https://publications.waset.org/pdf/2647},
	  url   	= {https://publications.waset.org/vol/69},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 69, 2012},
	}