Search results for: resistive RAM (RRAM).

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfO_x/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Keywords: HfOx, resistive switching, RRAM.

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Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.

Keywords: HfOx, resistive switching, RRAM, metal capping.

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Authors: Chi-Yan Chu, Kai-Chi Chuang, Huang-Chung Cheng

Abstract:

In this study, the RRAM devices with the TiN/Ti/HfO_x/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfO_x/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.

Keywords: RRAM, furnace annealing, forming, set and reset voltages, XPS.

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Authors: Z. Fang, H.Y. Yu, W.J. Liu, N. Singh, G.Q. Lo

Abstract:

High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.

Keywords: RRAM, resistive switching, temperature instability.

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Authors: Z. X. Chen, Z. Fang, X. P. Wang, G. -Q. Lo, D. -L. Kwong, Y. H. Wu

Abstract:

This paper presents a study of Ni-silicides as the bottom electrode of HfO₂-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni₂Si, NiSi, and NiSi₂. A 10nm HfO₂ switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni₂Si and NiSi cells were good, while the NiSi₂ cell could not switch reliably, indicating that the presence of Ni in the bottom electrode is important for good switching.

Keywords: HfO2-based, Ni-silicide, NiSi, resistive RAM (RRAM).

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Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.

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Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

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Authors: Hsin-Ping Huang, Shyankay Jou

Abstract:

Resistive switching of aluminum nitride (AlN_x) thin film was demonstrated in a TaN/AlN_x/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), R_HRS/R_LRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlN_x/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlN_x film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

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Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

Abstract:

This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC, Programmable Reference.

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Authors: Youngkuen Cho, Seonhong Hwang, Jinyoung Min, Youngho Kim, Dohyung Lim, Hansung Kim

Abstract:

Many studies have emphasized the importance of resistive exercise to maintain a healthy human body, particular in prevention of weakening of physical strength. Recently, some studies advocated that an application of vibration as a supplementary means in a regular training was effective in encouraging physical strength. Aim of the current study was, therefore, to identify if an application of vibration in a resistive exercise was effective in encouraging physical strength as that in a regular training. A 3-dimensional virtual lower extremity model for a healthy male and virtual leg-press model were generated and synchronized. Dynamic leg-press exercises on a slide machine with/without extra load and on a footboard with vibration as well as on a slide machine with extra load were analyzed. The results of the current indicated that the application of the vibration on the dynamic leg-press exercise might be not greatly effective in encouraging physical strength, compared with the dynamic leg press exercise with extra load. It was, however, thought that the application of the vibration might be helpful to elderly individuals because the reduced maximum muscle strength appeared by the effect of the vibration may avoid a muscular spasm, which can be driven from a high muscle strength sometimes produced during the leg-press exercise with extra load.

Keywords: Resistive exercise, leg-press exercise, muscle strength.

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Authors: D. Mirauda, M. Greco, A. Volpe Plantamura

Abstract:

The necessity of updating the numerical models inputs, because of geometrical and resistive variations in rivers subject to solid transport phenomena, requires detailed control and monitoring activities. The human employment and financial resources of these activities moves the research towards the development of expeditive methodologies, able to evaluate the outflows through the measurement of more easily acquirable sizes. Recent studies highlighted the dependence of the entropic parameter on the kinematical and geometrical flow conditions. They showed a meaningful variability according to the section shape, dimension and slope. Such dependences, even if not yet well defined, could reduce the difficulties during the field activities, and also the data elaboration time. On the basis of such evidences, the relationships between the entropic parameter and the geometrical and resistive sizes, obtained through a large and detailed laboratory experience on steady free surface flows in conditions of macro and intermediate homogeneous roughness, are analyzed and discussed.

Keywords: Froude number, entropic parameter, roughness, water discharge.

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Authors: Anil S. Khopkar, Kartik S. Pandya

Abstract:

Lightning overvoltage phenomenon in power systems cannot be avoided; however, it can be controlled to certain extent. To prevent system failure, power system equipment must be protected against overvoltage. Metal Oxide Surge Arrestors (MOSA) are connected in the system to provide protection against overvoltages. Under normal working conditions, MOSA function as, insulators, offering a conductive path during overvoltage events. MOSA consists of zinc oxide elements (ZnO Blocks) which has non-linear V-I characteristics. The ZnO blocks are connected in series and fitted in ceramic or polymer housing. Over time, these components degrade due to continuous operation. The degradation of zinc oxide elements increases the leakage current flowing through the surge arrestors. This increased leakage current results in elevated temperatures within the surge arrester, further decreasing the resistance of the zinc oxide elements. Consequently, the leakage current increases, leading to higher temperatures within the MOSA. This cycle creates thermal runaway conditions for the MOSA. Once a surge arrester reaches the thermal runaway condition, it cannot return to normal working conditions. This condition is a primary cause of premature failure of surge arrestors. Given that MOSA constitutes a core protective device for electrical power systems against transients, it contributes significantly to the reliable operation of power system networks. Therefore, periodic condition monitoring of surge arrestors is essential. Both online and offline condition monitoring techniques are available for surge arrestors. Offline condition monitoring techniques are not as popular because they require the removal of surge arrestors from the system, which requires system shutdown. Therefore, online condition monitoring techniques are more commonly used. This paper presents an evaluation technique for the surge arrester condition based on leakage current analysis. The maximum amplitudes of total leakage current (IT), fundamental resistive leakage current (IR), and third harmonic resistive leakage current (I3rd) are analyzed as indicators for surge arrester condition monitoring.

Keywords: Metal Oxide Surge Arrester, MOSA, Over voltage, total leakage current, resistive leakage current, third harmonic resistive leakage current, capacitive leakage current.

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Authors: T. Abdelkrim, K. Ben seddik, B. Bezza, K. Benamrane, Aeh. Benkhelifa

Abstract:

This paper proposes an implementation of boost converter for a resistive load using photovoltaic energy as a source. The model of photovoltaic cell and operating principle of boost converter are presented. A PIC microcontroller is used in the close loop control to generate pulses for controlling the converter circuit. To performance evaluation of boost converter, a variation of output voltage of PV panel is done by shading one and two cells.

Keywords: Boost converter, Microcontroller, Photovoltaic power generation, Shading cells.

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Authors: Ahmed Helal, Sherif Zain Elabideen, Ahmed Lotfy

Abstract:

In this paper the modeling and analysis of Space Vector Pulse Width Modulation (SVPWM) based Dynamic Voltage Restorer (DVR) using PSCAD/EMTDC software will be presented in details. The simulation includes full modeling of the SVPWM technique used to control the DVR inverter. A test power system composed of three phase voltage source, sag generator, DVR and three phase resistive load is used to demonstrate restoration capability of the DVR. The simulation results of the presented DVR proved excellent voltage sag mitigation to protect sensitive loads.

Keywords: Dynamic voltage restorer, power quality, simulationand modeling, voltage sag.

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Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar

Abstract:

This work proposes an accurate crosstalk noise estimation method in the presence of multiple RLC lines for the use in design automation tools. This method correctly models the loading effects of non switching aggressors and aggressor tree branches using resistive shielding effect and realistic exponential input waveforms. Noise peak and width expressions have been derived. The results obtained are at good agreement with SPICE results. Results show that average error for noise peak is 4.7% and for the width is 6.15% while allowing a very fast analysis.

Keywords: Crosstalk, distributed RLC segments, On-Chip interconnect, output response, VLSI, noise peak, noise width.

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Authors: P. Ram Mohan, M. Vijaya Kumar, O. V. Raghava Reddy

Abstract:

This paper deals with the simulation of a Boost Power Factor Correction (PFC) Converter with Electro Magnetic Interference (EMI) Filter. The diode rectifier with output capacitor gives poor power factor. The Boost Converter of PFC Circuit is analyzed and then simulated with diode rectifier. The Boost PFC Converter with EMI Filter is simulated for resistive load. The power factor is improved using the proposed converter.

Keywords: Boost Converter, Power Factor Correction, Electro Magnetic Interference, Diode Rectifier

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Authors: Sikder Mohammad Faruk, Mir Mofajjal Hossain, Muhibul Haque Bhuyan

Abstract:

In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.

Keywords: input current wave, three-phase rectifier, passive filter, PSPICE Simulation

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Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar

Abstract:

The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

Keywords: Delay, Inverter, Short Circuit Power, ¤Ç-Model, RLCInterconnect, VLSI

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Authors: Khin Fai Chen, Jee-Hou Ho, Eng Hwa Yap

Abstract:

An Acoustic Micro-Energy Harvester (AMEH) is developed to convert wasted acoustical energy into useful electrical energy. AMEH is mathematically modeled using Lumped Element Modelling (LEM) and Euler-Bernoulli beam (EBB) modelling. An experiment is designed to validate the mathematical model and assess the feasibility of AMEH. Comparison of theoretical and experimental data on critical parameter value such as Mm, Cms, dm and Ceb showed the variances are within 1% to 6%, which is reasonably acceptable. Then, AMEH undergoes bandwidth tuning for performance optimization. The AMEH successfully produces 0.9V/(m/s^2) and 1.79μW/(m^2/s^4) at 60Hz and 400kΩ resistive load which only show variances about 7% compared to theoretical data. At 1g and 60Hz resonance frequency, the averaged power output is about 2.2mW which fulfilled a range of wireless sensors and communication peripherals power requirements. Finally, the design for AMEH is assessed, validated and deemed as a feasible design.

Keywords: Piezoelectric, acoustic, energy harvester, thermoacoustic.

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Authors: Sheroz Khan, Mustafa Zeki, Shihab Abdel Hameed, AHM Zahirul Alam, Aisha Hassan Abdalla, A. F. Salami, W. A. Lawal

Abstract:

A novel circuit for generating a signal embedded with features about data from three sensors is presented. This suggested circuit is making use of a resistance-to-time converter employing a bridge amplifier, an integrator and a comparator. The second resistive sensor (Rz) is transformed into duty cycle. Another bridge with varying resistor, (Ry) in the feedback of an OP AMP is added in series to change the amplitude of the resulting signal in a proportional relationship while keeping the same frequency and duty cycle representing proportional changes in resistors Rx and Rz already mentioned. The resultant output signal carries three types of information embedded as variations of its frequency, duty cycle and amplitude.

Keywords: Integrator, Comparator, Bridge Circuit, Resistanceto-Time Converter, Conditioning Circuit.

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Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

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The power converter that feeds high-frequency, highvoltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively lowfrequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid overvoltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: High-voltage transformer, Resonant converter, Softcommutation.

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Authors: O. Ejale, N.B. Siddique, R. Seals

Abstract:

The purpose of this study was to present a reliable mean for human-computer interfacing based on finger gestures made in two dimensions, which could be interpreted and adequately used in controlling a remote robot's movement. The gestures were captured and interpreted using an algorithm based on trigonometric functions, in calculating the angular displacement from one point of touch to another as the user-s finger moved within a time interval; thereby allowing for pattern spotting of the captured gesture. In this paper the design and implementation of such a gesture based user interface was presented, utilizing the aforementioned algorithm. These techniques were then used to control a remote mobile robot's movement. A resistive touch screen was selected as the gesture sensor, then utilizing a programmed microcontroller to interpret them respectively.

Keywords: 2-Dimensional interface, finger gesture, mobile robot control, touch screen.

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Authors: Ibrahim S. Alnomay, Jihad Y. Alhammad

Abstract:

Lately, an interest has grown greatly in the usages of RFID in an un-presidential applications. It is shown in the adaptation of major software companies such as Microsoft, IBM, and Oracle the RFID capabilities in their major software products. For example Microsoft SharePoints 2010 workflow is now fully compatible with RFID platform. In addition, Microsoft BizTalk server is also capable of all RFID sensors data acquisition. This will lead to applications that required high bit rate, long range and a multimedia content in nature. Higher frequencies of operation have been designated for RFID tags, among them are the 2.45 and 5.8 GHz. The higher the frequency means higher range, and higher bit rate, but the drawback is the greater cost. In this paper we present a single layer, low profile patch antenna operates at 5.8 GHz with pure resistive input impedance of 50 and close to directive radiation. Also, we propose a modification to the design in order to improve the operation band width from 8.7 to 13.8

Keywords: Microstrip Antenna, RFID, U-shaped, double layer, circular antenna.

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Authors: Md. Aminul Islam, Adel Merabet, Rachid Beguenane, Hussein Ibrahim

Abstract:

This paper presents a simulation and mathematical model of stand-alone solar-wind-diesel based hybrid energy system (HES). A power management system is designed for multiple energy resources in a stand-alone hybrid energy system. Both Solar photovoltaic and wind energy conversion system consists of maximum power point tracking (MPPT), voltage regulation, and basic power electronic interfaces. An additional diesel generator is included to support and improve the reliability of stand-alone system when renewable energy sources are not available. A power management strategy is introduced to distribute the generated power among resistive load banks. The frequency regulation is developed with conventional phase locked loop (PLL) system. The power management algorithm was applied in Matlab^®/Simulink^® to simulate the results.

Keywords: Solar photovoltaic, wind energy, diesel engine, hybrid energy system, power management, frequency and voltage regulation.

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Authors: Mei Shan Ngan, Chee Wei Tan

Abstract:

Due to the non-linear characteristics of photovoltaic (PV) array, PV systems typically are equipped with the capability of maximum power point tracking (MPPT) feature. Moreover, in the case of PV array under partially shaded conditions, hotspot problem will occur which could damage the PV cells. Partial shading causes multiple peaks in the P-V characteristic curves. This paper presents a hybrid algorithm of Particle Swarm Optimization (PSO) and Artificial Neural Network (ANN) MPPT algorithm for the detection of global peak among the multiple peaks in order to extract the true maximum energy from PV panel. The PV system consists of PV array, dc-dc boost converter controlled by the proposed MPPT algorithm and a resistive load. The system was simulated using MATLAB/Simulink package. The simulation results show that the proposed algorithm performs well to detect the true global peak power. The results of the simulations are analyzed and discussed.

Keywords: Photovoltaic (PV), Partial Shading, Maximum Power Point Tracking (MPPT), Particle Swarm Optimization (PSO) and Artificial Neural Network (ANN)

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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Authors: Yan Yu, Wang Yu, Chen Xintong, Liu Yi, Zhang Yanzhong, Wang Yanji, Chen Xingyu, Zhang Miaocheng, Tong Yi

Abstract:

Neuromorphic computing based on spiking neural networks (SNNs) has emerged as a promising avenue for building the next generation of intelligent computing systems. Owing to their high-density integration, low power, and outstanding nonlinearity, memristors have attracted emerging attention on achieving SNNs. However, fabricating a low-power and robust memristor-based spiking neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a TiO2-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, used to realize single layer fully connected (FC) SNNs. Moreover, our TiO2-based resistive switching (RS) memristors realize spiking-time-dependent-plasticity (STDP), originating from the Ag diffusion-based filamentary mechanism. This work demonstrates that TiO2-based memristors may provide an efficient method to construct hardware neuromorphic computing systems.

Keywords: Leaky integrate-and-fire, memristor, spiking neural networks, spiking-time-dependent-plasticity.

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Authors: Zahzouh Zoubir, Bouzaouit Azzeddine, Gahgah Mounir

Abstract:

The use of more and more electronic power switches with a nonlinear behavior generates non-sinusoidal currents in distribution networks, which causes damage to domestic and industrial equipment. The multi-level shunt power active filter is subsequently shown to be an adequate solution to the problem raised. Nevertheless, the difficulty of adjusting the active filter DC supply voltage requires another technology to ensure it. In this article, a photovoltaic generator is associated with the DC bus power terminals of the active filter. The proposed system consists of a field of solar panels, three multi-level voltage inverters connected to the power grid and a non-linear load consisting of a six-diode rectifier bridge supplying a resistive-inductive load. Current control techniques of active and reactive power are used to compensate for both harmonic currents and reactive power as well as to inject active solar power into the distribution network. An algorithm of the search method of the maximum power point of type Perturb and observe is applied. Simulation results of the system proposed under the MATLAB/Simulink environment shows that the performance of control commands that reassure the solar power injection in the network, harmonic current compensation and power factor correction.

Keywords: MPPT, active power filter, PV array, perturb and observe algorithm, PWM-control.

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Authors: O. Ologe, A. I. Augie

Abstract:

A geophysical investigation involving geoelectric depths sounding has been conducted as pre-foundation study in part of Ilorin, Nigeria. The area is underlain by the Precambrian basement complex rocks. 15 sounding stations were established along five traverses. The Vertical Electrical Sounding (VES) (three-five) conducted along each of the traverses was subjected to computer iteration using IP2Win software. Three -five subsurface geologic layers were delineated in the study area. These include the topsoil with resistivity and thickness values ranging from 103 Ωm-210 Ωm and 0 m-1 m; lateritic (117 Ωm-590 Ωm and 1 m-4.7 m); sandy clay (137 – 859 Ωm and 2.9 m – 4.3 m); weathered (60.5 Ωm to 2539 Ωm and 3,2 m-10 m) and fresh basement (2253-∞ and 7.1 m-∞) respectively. The resistivity pseudosection shows continuous high resistivity zone on the surface. Resistivity of this layer from depth 0-5 m varies from 300-800 Ωm along traverse 1 and 2. Hence, this layer is rated competent as it has the ability to support engineering structure. However, along traverse 1, very low resistive layer occurs between VES 5 and 15 with resistivity values ranging from 30 Ωm-70 Ωm. This layer was rated incompetent based on the competence rating. This study revealed the importance of geophysical survey as a pre-construction engineering survey at any civil engineering site since it can reliably evaluate the competence of the subsurface geomaterials.

Keywords: Competence rating, geoelectric, pseudosection, soil, vertical electrical sounding.

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