Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes
In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1131703Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 670
 H.-S. Philip Wong, Simone Raoux, SangBum Kim, “Phase Change Memory,” Proc. IEEE. 98, 2201-2227 (2010).
 Tehrani, S. et al., “Magnetoresistive random access memory using magnetic tunnel junctions,” Proc. IEEE (USA). 91, 703–714 (2003).
 Fox, G. R., Chu, F. & Davenport, T., “Current and future ferroelectric non-volatile memory technology,” J. Vac. Sci. Technol. B. 19, 1967–1971 (2001).
 Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, “Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM,” Adv. Mater. 24 (2012) 1844–1849.
 K. Kita, A. Eika, T. Nishimura, K. Nagashio, A. Toriumi, “Resistive switching behaviors of NiO bilayer films with different crystallinity layers,” ECS Trans. 28(210) 315-322.
 Li-Wei Feng, Chun-Yen Chang, Yao-Feng Chang, Ting-Chang Chang, Shin-Yuan Wang, Shih-Ching Chen, Chao-Cheng Lin, Shih-Cheng Chen, and Pei-Wei Chiang, “Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2 /FeOx /FePt structure by rapid annealing,” Appl. Phys. Lett. 96, 222108 (2010).
 Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai1, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Yao-Feng Chang, Min-Chen Chen, Tian-Jian Chu, Hsin-Lu Chen, Chih-Hung Pan, Chih-Cheng Shih, Jin-Cheng Zheng and Simon M Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory,” Nanoscale research letters 10, 1 (2015).
 Jun Yao, Lin Zhong, Douglas Natelson, and James M. Tour, “Etching-dependent reproducible memory switching in vertical SiO 2 structures,” Appl. Phys. Lett. 93, 253101 (2008).
 Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem, James M. Tour, “High-Performance and Low-Power Rewitable SiOx 1 kbit One Diode-One Resistor Crossbar Memory Array,” Adv. Mater. 25, 4789 (2013).
 Li-Wei Feng, Chun-Yen Chang, Yao-Feng Chang, Wei-Ren Chen, Shin-Yuan Wang, Pei-Wei Chiang, and Ting-Chang Chang, “A study of resistive switching effects on a thin FeOx transistion layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures”, Appl. Phys. Lett. 96, 052111 (2010).
 Fei Xue, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Yao-Feng Chang, B.Fowler and Jack Lee, “The effect of plasma treatment on reducing electroforming voltage of silicon oxide RRAM,”ECS Trans. 45, 245 (2012).
 Burt W. Fowler, Yao-Feng Chang, Fei Zhou, Yanzhen Wang, Pai-Yu Chen, Fei Xue, Yen-Ting Chen, Brad Bringhurst, Scott Pozder and Jack C. Lee,” Electroforming and resistive switching in silicon dioxide resistive memory devices,” RSC Adv. 5, 21215 (2015).
 Yao-Feng Chang, Pai-Yu Chen, Burt Fowler, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou and Jack C. Lee, “Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory,” Appl. Phys. 112, 123702 (2012).
 Yanzhen Wang, Burt Fowler, Fei Zhou, Yao-Feng Chang, Yen-Ting Chen, Fei Xue and Jack C. Lee, “Effects of sidewall etching on electrical properties of SiOx resistive random access memory,” Appl. Phys. Lett. 103, 213505(2013).
 Fei Zhou, Yao-Feng Chang, Burt Fowler, Kwangsub Byun and Jack C. Lee, “Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory,” Appl. Phys. Lett. 106, 063508 (2015).
 Wong, H-S. Philip, et al. “Metal-oxide RRAM,” Proceedings of the IEEE 100.6(2012):1951-1970.
 I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, “Electrochemical metallization memories-Fundamentals, applications, prospects,” Nanotechnology, vol.22, no. 25, 254003, 2011.
 W. Wang, T. Nabatame, Y. Shimogaki, “Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor,” Surf. Sci. 588(2005) 108-116.
 P. Lorenzi, R. Rao, T. Prifti, F. Irrera, “Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM”, Microelectron. Reliab. 53(2013) 1203-1207.
 R. Jiang, E. Xie, Z. Chen, Z. Zhang, “Electricial property of HfOxNy-HfO2-HfOxNy sandwich-stack films,”Appl.Surf.Sci.253 (2006) 2421-2424.
 Zheng Fang, Xin Peng Wang, Joon Sohn, Bao Bin Weng, Zhi Ping Zhang, Zhi Xian Chen, Yan Zhe Tang, Guo-Qiang Lo, J. Provine, Simon S. Wong, H.-S. Philip Wong, and Dim-Lee Kwong, “The Role of Ti Capping Layer in HfOx-Based RRAM Devices,” IEEE Electron Device Letters, Vol. 35, No. 9, September 2014.