@article{(Open Science Index):https://publications.waset.org/pdf/10007672, title = {Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes}, author = {Chi-Yan Chu and Kai-Chi Chuang and Huang-Chung Cheng}, country = {}, institution = {}, abstract = {In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics. }, journal = {International Journal of Electronics and Communication Engineering}, volume = {11}, number = {8}, year = {2017}, pages = {947 - 950}, ee = {https://publications.waset.org/pdf/10007672}, url = {https://publications.waset.org/vol/128}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 128, 2017}, }