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Explicit Delay and Power Estimation Method for CMOS Inverter Driving on-Chip RLC Interconnect Load

Authors: RAJIB KAR, Susmita Sahoo, Madhumanti Datta


The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

Keywords: VLSI, Inverter, delay, Short Circuit Power, ¤Ç-Model, RLCInterconnect

Digital Object Identifier (DOI):

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