Z. X. Chen and Z. Fang and X. P. Wang and G. -Q. Lo and D. -L. Kwong and Y. H. Wu, Switching Behaviors of HfO2/NiSix Based RRAM. journal = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. September 2013, vol. 81(9). 1230 - 1232 [viewed 22 September 2024]. Available from: https://publications.waset.org/pdf/16701.