Search results for: Transistor laser

Authors: Vishnu Pratap Singh Kirar

Abstract:

Memristor is also known as the fourth fundamental passive circuit element. When current flows in one direction through the device, the electrical resistance increases and when current flows in the opposite direction, the resistance decreases. When the current is stopped, the component retains the last resistance that it had, and when the flow of charge starts again, the resistance of the circuit will be what it was when it was last active. It behaves as a nonlinear resistor with memory. Recently memristors have generated wide research interest and have found many applications. In this paper we survey the various applications of memristors which include non volatile memory, nanoelectronic memories, computer logic, neuromorphic computer architectures low power remote sensing applications, crossbar latches as transistor replacements, analog computations and switches.

Keywords: Memristor, non-volatile memory, arithmatic operation, programmable resistor.

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Authors: S. Cobos-Guzman

Abstract:

This paper presents the results of a mechatronic design based on a 4-wheel omnidirectional mobile robot that can be used in indoor logistic applications. The low-level control has been selected using two open-source hardware (Raspberry Pi 3 Model B+ and Arduino Mega 2560) that control four industrial motors, four ultrasound sensors, four optical encoders, a vision system of two cameras, and a Hokuyo URG-04LX-UG01 laser scanner. Moreover, the system is powered with a lithium battery that can supply 24 V DC and a maximum current-hour of 20Ah.The Robot Operating System (ROS) has been implemented in the Raspberry Pi and the performance is evaluated with the selection of the sensors and hardware selected. The mechatronic system is evaluated and proposed safe modes of power distribution for controlling all the electronic devices based on different tests. Therefore, based on different performance results, some recommendations are indicated for using the Raspberry Pi and Arduino in terms of power, communication, and distribution of control for different devices. According to these recommendations, the selection of sensors is distributed in both real-time controllers (Arduino and Raspberry Pi). On the other hand, the drivers of the cameras have been implemented in Linux and a python program has been implemented to access the cameras. These cameras will be used for implementing a deep learning algorithm to recognize people and objects. In this way, the level of intelligence can be increased in combination with the maps that can be obtained from the laser scanner.

Keywords: Autonomous, indoor robot, mechatronic, omnidirectional robot.

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

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We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: K. Melouk, M. Dellakrachai

Abstract:

Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.

Keywords: Laser, quantum well, semiconductor, InGaAsP.

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Authors: Nasser Erfani Majd, Mojtaba Lotfizad

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In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.

Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust

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Authors: Z.A. Jaffery, Vinay Kumar Chandna, Sunil Kumar Chaudhary

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This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The values of Cdc as suggested by the other authors in their papers are not clearly defined and it poses difficulty in selecting the proper value. As the dc power stored in Cdc, (generally placed parallel with battery) is used as input to the VSI inverter. The simulation results shows the variation in the output voltage and current with different values of Cdc for linear and non-linear load connected at the output side of PV VSI inverter and suggest the selection of suitable value of Cdc.

Keywords: DC Blocking capacitor, IGBTs, PV VSI, THD.

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Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

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We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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Authors: Abdalla Mohamed Eblabla

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Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: C. M. M. Paschoal, M. L. Sobrinho, D. do N. Souza, J. Antônio Filho, L. A. P. Santos

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Computed tomography (CT) dosimetry normally uses an ionization chamber 100 mm long to estimate the computed tomography dose index (CTDI), however some reports have already indicated that small devices could replace the long ion chamber to improve quality assurance procedures in CT dosimetry. This paper presents a novel dosimetry system based in a commercial phototransistor evaluated for CT dosimetry. Three detector configurations were developed for this system: with a single, two and four devices. Dose profile measurements were obtained with them and their angular response were evaluated. The results showed that the novel dosimetry system with the phototransistor could be an alternative for CT dosimetry. It allows to obtain the CT dose profile in details and also to estimate the CTDI in longer length than the 100 mm pencil chamber. The angular response showed that the one device detector configuration is the most adequate among the three configurations analyzed in this study.

Keywords: Computed tomography, dosimetry, photo-transistor

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

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Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: Najm M. Al-Hosiny

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We theoretically investigate the effects of frequency detuning and injection power on the nonlinear dynamics of DFB lasers under dual external optical injection.

Keywords: Optical injection, DFB laser, frequency detuning, injection power.

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Authors: P.K. Sharma, B. Bhargava, S. Akashe

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Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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Authors: Andrej Golowin, Viktor Denk, Axel Riepe

Abstract:

Solid fan blades and discs in aero engines are subjected to high combined low and high cycle fatigue loads especially around the contact areas between blade and disc. Therefore, special coatings (e.g. dry film lubricant) and surface treatments (e.g. shot peening or laser shock peening) are applied to increase the strength with respect to combined cyclic fatigue and fretting fatigue, but also to improve damage tolerance capability. The traditional deterministic damage tolerance assessment based on fracture mechanics analysis, which treats service damage as an initial crack, often gives overly conservative results especially in the presence of vibratory stresses. A probabilistic damage tolerance methodology using crack initiation data has been developed for fan discs exposed to relatively high vibratory stresses in cross- and tail-wind conditions at certain resonance speeds for limited time periods. This Monte-Carlo based method uses a damage databank from similar designs, measured vibration levels at typical aircraft operations and wind conditions and experimental crack initiation data derived from testing of artificially damaged specimens with representative surface treatment under combined fatigue conditions. The proposed methodology leads to a more realistic prediction of the minimum damage tolerance life for the most critical locations applicable to modern fan disc designs.

Keywords: Damage tolerance, Monte-Carlo method, fan blade and disc, laser shock peening.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: Ankit Mitra

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An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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Authors: Mohd. Hasan, Ajmal Kafeel, S. D. Pable

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Ultra-low-power (ULP) circuits have received widespread attention due to the rapid growth of biomedical applications and Battery-less Electronics. Subthreshold region of transistor operation is used in ULP circuits. Major research challenge in the subthreshold operating region is to extract the ULP benefits with minimal degradation in speed and robustness. Process, Voltage and Temperature (PVT) variations significantly affect the performance of subthreshold circuits. Designed performance parameters of ULP circuits may vary largely due to temperature variations. Hence, this paper investigates the effect of temperature variation on device and circuit performance parameters at different biasing voltages in the subthreshold region. Simulation results clearly demonstrate that in deep subthreshold and near threshold voltage regions, performance parameters are significantly affected whereas in moderate subthreshold region, subthreshold circuits are more immune to temperature variations. This establishes that moderate subthreshold region is ideal for temperature immune circuits.

Keywords: Subthreshold, temperature variations, ultralow power.

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Authors: Hema Sandhya Jagarlamudi, Mousumi Saha, Pavan Kumar Jagarlamudi

Abstract:

The use of Quantum dots is a promising emerging Technology for implementing digital system at the nano level. It is effecient for attractive features such as faster speed , smaller size and low power consumption than transistor technology. In this paper, various Combinational and sequential logical structures - HALF ADDER, SR Latch and Flip-Flop, D Flip-Flop preceding NAND, NOR, XOR,XNOR are discussed based on QCA design, with comparatively less number of cells and area. By applying these layouts, the hardware requirements for a QCA design can be reduced. These structures are designed and simulated using QCA Designer Tool. By taking full advantage of the unique features of this technology, we are able to create complete circuits on a single layer of QCA. Such Devices are expected to function with ultra low power Consumption and very high speeds.

Keywords: QCA, QCA Designer, Clock, Majority Gate

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

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In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: Amplifier, DVB-T, LDMOS, MOSFETS.

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Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn

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In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.

Keywords: Avalanche, Base resistance, Bipolar transistor, Compact modeling, Early voltage, Thermal resistance, Self-heating, parameter extraction.

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Satish Kumar, Arun Kumar Gupta, Pankaj Chandna

Abstract:

In the modern manufacturing systems, the use of thermal cutting techniques using oxyfuel, plasma and laser have become indispensable for the shape forming of high quality complex components; however, the conventional chip removal production techniques still have its widespread space in the manufacturing industry. Both these types of machining operations require the positioning of end effector tool at the edge where the cutting process commences. This repositioning of the cutting tool in every machining operation is repeated several times and is termed as non-productive time or airtime motion. Minimization of this non-productive machining time plays an important role in mass production with high speed machining. As, the tool moves from one region to the other by rapid movement and visits a meticulous region once in the whole operation, hence the non-productive time can be minimized by synchronizing the tool movements. In this work, this problem is being formulated as a general travelling salesman problem (TSP) and a genetic algorithm approach has been applied to solve the same. For improving the efficiency of the algorithm, the GA has been hybridized with a noble special heuristic and simulating annealing (SA). In the present work a novel heuristic in the combination of GA has been developed for synchronization of toolpath movements during repositioning of the tool. A comparative analysis of new Meta heuristic techniques with simple genetic algorithm has been performed. The proposed metaheuristic approach shows better performance than simple genetic algorithm for minimization of nonproductive toolpath length. Also, the results obtained with the help of hybrid simulated annealing genetic algorithm (HSAGA) are also found better than the results using simple genetic algorithm only.

Keywords: Non-productive time, Airtime, 2.5 D milling, Laser cutting, Metaheuristic, Genetic Algorithm, Simulated Annealing.

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Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

Abstract:

The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

Abstract:

The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

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Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

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Authors: S. Al-Sowayan, K. L. Lear

Abstract:

A new technique to quantify the differential mode delay (DMD) in multimode fiber (MMF) is been presented. The technique measures DMD based on angular launch and measurements of the difference in modal delay using variable apertures at the fiber face. The result of the angular spatial filtering revealed less excitation of higher order modes when the laser beam is filtered at higher angles. This result would indicate that DMD profiles would experience a data pattern dependency.

Keywords: Fiber measurements, Fiber optic communications

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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Authors: Amon Tunwannarux, Supanunt Tunwannarux

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This paper presents design features of a rescue robot, named CEO Mission II. Its body is designed to be the track wheel type with double front flippers for climbing over the collapse and the rough terrain. With 125 cm. long, 5-joint mechanical arm installed on the robot body, it is deployed not only for surveillance from the top view but also easier and faster access to the victims to get their vital signs. Two cameras and sensors for searching vital signs are set up at the tip of the multi-joint mechanical arm. The third camera is at the back of the robot for driving control. Hardware and software of the system, which controls and monitors the rescue robot, are explained. The control system is used for controlling the robot locomotion, the 5-joint mechanical arm, and for turning on/off devices. The monitoring system gathers all information from 7 distance sensors, IR temperature sensors, 3 CCD cameras, voice sensor, robot wheels encoders, yawn/pitch/roll angle sensors, laser range finder and 8 spare A/D inputs. All sensors and controlling data are communicated with a remote control station via IEEE 802.11b Wi-Fi. The audio and video data are compressed and sent via another IEEE 802.11g Wi-Fi transmitter for getting real-time response. At remote control station site, the robot locomotion and the mechanical arm are controlled by joystick. Moreover, the user-friendly GUI control program is developed based on the clicking and dragging method to easily control the movement of the arm. Robot traveling map is plotted from computing the information of wheel encoders and the yawn/pitch data. 2D Obstacle map is plotted from data of the laser range finder. The concept and design of this robot can be adapted to suit many other applications. As the Best Technique awardee from Thailand Rescue Robot Championship 2006, all testing results are satisfied.

Keywords: Controlling, monitoring, rescue robot, mechanicalarm.

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