Commenced in January 2007
Paper Count: 30076
Characterization of InGaAsP/InP Quantum Well Lasers
Abstract:Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1109487Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1586
 S. Adachi, “Physical properties of III-V semiconductor compounds”, 1992.
 T. P. Pearsall, “InGaAsP Alloy Semiconductors,” 1982.
 S. Adachi, “Material Parameters of In1-xGaxAsyP1-y and Related Binaries,” J. Appl. Phys, vol. 53, No. 12, pp. 8775-8792, Dec. 1982.
 T. Makino, “Analytical Formulas for the Optical Gain of Quantum Wells,” IEEE J. Quantum. Electron., vol. 32, No. 3, pp. 493-501, Mar. 1996.
 Melouk, K. Bousbahi, K. Boughanmi, N. Krachai, M.D “Gain calculation of InGaAsP/InP multi-quantum well lasers” Proceedings the 16th International Conference on Microelectronics, 2004 (ICM 2004); 2004, p589-593.
 K. Melouk and Boughanmi, N. “Characterisation of GaN–In xGa1− xN quantum-well lasers” Applied Physics B: Lasers & Optics; Aug2009, Vol. 96 Issue 2/3, p465-469.
 M. Asada, A. Kameyama, and Y. Suematsu, “Gain and Intervalence Band Absorption in Quantum-Well Lasers,” IEEE J. Quantum. Electron., vol. 20, No. 7, pp. 745-753, Jul. 1984.
 M. Asada and Y. Suematsu, “Density-Matrix Theory of Semiconductor Lasers with Relaxation Broadening Model─Gain and Gain-suppression in Semiconductors Lasers,” IEEE J. Quantum. Electron., vol. 21, No. 5, pp. 434-442, May. 1985.
 M. Yamada, S. Ogita, M. Yamagishi, and K. Tabata, “Anisotropy and Broadening of Optical Gain in a GaAs/AlGaAs Multiquantum-Well Laser,” IEEE J. Quantum. Electron., vol. 21, No. 6, pp. 640-645, Jun. 1985.