Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30127
Influence of Measurement System on Negative Bias Temperature Instability Characterization: Fast BTI vs Conventional BTI vs Fast Wafer Level Reliability

Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

Abstract:

Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1339902

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 670

References:


[1] Schroder, D. K. (2007). Negative bias temperature instability: What do we understand?. Microelectronics Reliability, 47(6), 841-852.
[2] Rauch, S. E. (2002). The statistics of NBTI-induced V T and β mismatch shifts in pMOSFETs. IEEE transactions on device and materials reliability, 2(4), 89-93.
[3] Aichinger, T., Nelhiebel, M., & Grasser, T. (2009, April). Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes. In 2009 IEEE International Reliability Physics Symposium (pp. 2-7). IEEE.
[4] Agilent Technologies, “Agilent B1500A Semiconductor Device Analyzer - Ultra-Fast 1μs NBTI Characterization Using the Agilent B1500A’s WGFMU Module,” Application Note B1500-10, 5989-9963EN, 2008.
[5] Nishimura, T. (2013). Solve MOSFET characteristic variation and reliability degradation issues. Electronic Design News (EDN), 177-180.
[6] Jedec Standard JESD241 “Procedure for Wafer-Level DC Characterization of Bias Temperature Instabilities”
[7] Chiu, J. P., Liu, Y. H., Hsieh, H. D., Li, C. W., Chen, M. C., & Wang, T. (2013). Statistical Characterization and Modeling of the Temporal Evolutions of Distribution in NBTI Recovery in Nanometer MOSFETs. IEEE Transactions on Electron Devices, 60(3), 978-984.
[8] Yang, J. B., Chen, T. P., Tan, S. S., & Chan, L. (2006, July). A novel empirical model for NBTI recovery with the modulated measurement time frame. In 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 33-36). IEEE.
[9] Ershov, M., Saxena, S., Karbasi, H., Winters, S., Minehane, S., Babcock, J.,... & Shibkov, A. (2003). Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors. Applied physics letters, 83(8), 1647-1649..
[10] Huard, V., Denais, M., & Parthasarathy, C. (2006). NBTI degradation: From physical mechanisms to modelling. Microelectronics Reliability, 46(1), 1-23.
[11] Rangan, S., Mielke, N., & Yeh, E. C. C. (2003, December). Universal recovery behavior of negative bias temperature instability
[PMOSFETs]. In Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International (pp. 14-3). IEEE.
[12] Jedec Standard JESD90 “A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities”
[13] WONG, V. K. S., NG, H. S., & Sim, P. C. (2015, December). Impact of NBTI Recovery, Measurement System and Testing Time on NBTI Lifetime Estimation. In 2015 International Conference on Advanced Manufacturing and Industrial Application. Atlantis Press.
[14] Aono, H., Murakami, E., Shiga, K., Fujita, F., Yamamoto, S., Ogasawara, M.,... & Kubota, K. (2008, April). A study of SRAM NBTI by OTF measurement. In 2008 IEEE International Reliability Physics Symposium (pp. 67-71). IEEE.
[15] Shen, C., Li, M. F., Foo, C. E., Yang, T., Huang, D. M., Yap, A., ... & Yeo, Y. C. (2006, December). Characterization and physical origin of fast Vth transient in NBTI of pMOSFETs with SiON dielectric. In 2006 International Electron Devices Meeting (pp. 1-4). IEEE.