Verification of the Simultaneous Local Extraction Method of Base and Thermal Resistance of Bipolar Transistors
Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn
Abstract:
In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.
Keywords: Avalanche, Base resistance, Bipolar transistor, Compact modeling, Early voltage, Thermal resistance, Self-heating, parameter extraction.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1096073
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2054References:
[1] R. Setekera, R. van der Toorn, and W. Kloosterman, "Local extraction of base and thermal resistance of bipolar transistors,” in Proc. Bipolar Circuits and Technology Meeting, 2013, pp. 21–24.
[2] R. Setekera, L. F. Tiemeijer, W. J. Kloosterman, and R. van der Toorn, "Analysis of the local extraction method of base and thermal resistance of bipolar transistors,” in Proc. Bipolar Circuits and Technology Meeting, 2014, pp. 21–24.
[3] W. D. Noort, A. Rodriguez, H. Sun, F. Zaato, N. Zhang, T. Nesheiwat, F. Neuilly, J. Melai, and E. Hijzen, "BiCMOS technology improvements for microwave application,” in Proc. BCTM 6.2, 2008, pp. 93–96.
[4] T. Vanhoucke and G. A. M. Hurkx, "Simultaneous extraction of the base and thermal resistances of bipolar transistors,” IEEE Transactions on Electron Devices, vol. 52, no. 8, pp. 1887–1892, Aug 2005.
[5] D. Leenaerts, "mmwave activities within NXP,” Compus Technology Seminar, March 2012.
[6] S. Z. A. J. G. Niu, J.D. Cressler and D. Harame, "Noise-gain tradeoff in rf sige hbts,” Solid-State Elec., vol. 46, pp. 1445–1451, 2002.
[7] R. van der Toorn, J. C. J. Paasschens, W. J. Kloosterman, and H. C. de Graaff, Compact Modeling: Principles, Techniques, and Applications. Springer-Verlag, 2010, ch. 7.