Search results for: IGBTs

Authors: Mojtaba Ghodsi, Hamidreza Ziaifar, Morteza Mohammadzaheri, Payam Soltani

Abstract:

In this paper, the performance of a medium power (25 kW/25 kHz) hybrid inverter with a reactive transformer is investigated. To analyze the sensitivity of the inverster, the RSM technique is employed to manifest the effective factors in the inverter to minimize current passing through the Insulated Bipolar Gate Transistors (IGBTs) (current stress). It is revealed that the ratio of the axillary inductor to the effective inductance of resonant inverter (N), is the most effective parameter to minimize the current stress in this type of inverter. In practice, proper selection of N mitigates the current stress over IGBTs by five times. This reduction is very helpful to keep the IGBTs at normal temperatures.

Keywords: Analytical analysis, hybrid resonant inverter, reactive transformer, response surface method.

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Authors: Z.A. Jaffery, Vinay Kumar Chandna, Sunil Kumar Chaudhary

Abstract:

This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The values of Cdc as suggested by the other authors in their papers are not clearly defined and it poses difficulty in selecting the proper value. As the dc power stored in Cdc, (generally placed parallel with battery) is used as input to the VSI inverter. The simulation results shows the variation in the output voltage and current with different values of Cdc for linear and non-linear load connected at the output side of PV VSI inverter and suggest the selection of suitable value of Cdc.

Keywords: DC Blocking capacitor, IGBTs, PV VSI, THD.

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Authors: Kelaiaia Mounia Samira, Labar Hocine, Bounaya Kamel, Kelaiaia Samia

Abstract:

With the rapid advanced of technology, the industrial processes become increasingly demanding, from the point of view, power quality and controllability. The advent of multi levels inverters responds partially to these requirements. But actually, the new generation of multi-cells inverters permits to reach more performances, since, it offers more voltage levels. The disadvantage in the increase of voltage levels by the number of cells in cascades is on account of series igbts synchronisation loss, from where, a limitation of cells in cascade to 4. Regarding to these constraints, a new topology is proposed in this paper, which increases the voltage levels of the three-cell inverter from 4 to 8; with the same number of igbts, and using less stored energy in the flaying capacitors. The details of operation and modelling of this new inverter structure are also presented, then tested thanks to a three phase induction motor. KeywordsFlaying capacitors, Multi-cells inverter, pwm, switchers, modelling.

Keywords: Flaying capacitors, Multi-cells inverter, pwm, switchers, modelling.

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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Authors: Ly. Benbahouche

Abstract:

Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics.

The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments.

The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device).

Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.

Keywords: PT-IGBT, ZCS, turn-off losses, dV/dt.

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Authors: R. Kamalakannan, N. Ravi Kumar

Abstract:

The global energy consumption is increasing persistently and need for distributed power generation through renewable energy is essential. To meet the power requirements for consumers without any voltage fluctuations and losses, modeling and design of multilevel inverter with Flexible AC Transmission System (FACTS) capability is presented. The presented inverter is provided with 13-level cascaded H-bridge topology of Insulated Gate Bipolar Transistor (IGBTs) connected along with inbuilt Distributed Static Synchronous Compensators (DSTATCOM). The DSTATCOM device provides control of power factor stability at local feeder lines and the inverter eliminates Total Harmonic Distortion (THD). The 13-level inverter utilizes 52 switches of each H-bridge is fed with single DC sources separately and the Pulse Width Modulation (PWM) technique is used for switching IGBTs. The control strategy implemented for inverter transmits active power to grid as well as it maintains power factor to be stable with achievement of steady state power transmission. Significant outcome of this project is improvement of output voltage quality with steady state power transmission with low THD. Simulation of inverter with DSTATCOM is performed using MATLAB/Simulink environment. The scaled prototype model of proposed inverter is built and its results were validated with simulated results.

Keywords: FACTS devices, distributed-Static synchronous compensators, DSTATCOM, total harmonics elimination, modular multilevel converter.

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Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

Abstract:

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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