Commenced in January 2007
Paper Count: 30850
The Light Response Characteristics of Oxide-Based Thin Film Transistors
Abstract:We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1077519Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1085
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