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The Light Response Characteristics of Oxide-Based Thin Film Transistors

Authors: Soo-Yeon Lee, Moon-Kyu Song, Seung-Min Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han


We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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[1] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin film transistor fabricated in single-crystalline transparent oxide semiconductor", Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
[2] K. Nomura et al.,"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
[3] E. Fortunato et al., "Fully transparent ZnO thin-film transistor produced at room temperature", Adv. Mater., vol. 17, no. 5, pp. 590-594, Mar. 2005.
[4] H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature RF-magnetron sputtering", Appl. Phys. Lett., vol. 89, no. 11, pp. 112 123-1-112123-3, Sep. 2006.
[5] A. Suresh et al., "Transparent, high mobility InGaZnO thin films deposited by PLD", Thin Solid Films, vol. 516, no. 7, pp. 1326-1329, 2008.
[6] P. Barquinha, L. Pereira, G. Goncalves, R. Martins, and E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc., vol. 156, no. 3, pp. H161-H168, 2009.
[7] J. Y. Kwon et al., "Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display", vol. 29, no. 12, pp. 1309-1311, Dec. 2008.
[8] J. S. Park et al., "Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium-Indium-Zinc Oxide Thin-Film Transistors", IEEE Electron Device Letters, vol. 31, no. 5, May 2010.
[9] K. Takechi et al., "Comparison of Ultraviolet Photo- Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGa ZnO4 Thin-Film Transistors", Jpn. J. Appl. Phys., vol. 48, pp. 010203-1-010203-3, Jan. 2009.
[10] M. Kimura et al., "Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation", Appl. Phys. Lett., vol.97, no. 16, pp. 163503-1-163503-3, Oct. 2010.
[11] T.-C. Fung et al., "Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors", Journal of Information Display, vol.9, no.4, pp. 21-29, 2008.
[12] J. K. Jeong et al., "High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel", Appl. Phys. Lett., vol. 91, no. 91, pp. 113505-1-113505-3, Sep. 2007.