%0 Journal Article %A Hung-Pei Hsu and Jyi-Tsong Lin and Po-Hsieh Lin and Cheng-Hsien Chang and Ming-Tsung Shih and Chan-Hsiang Chang and Shih-Chuan Tseng and Min-Yan Lin and Shih-Wen Hsu %D 2013 %J International Journal of Physical and Mathematical Sciences %B World Academy of Science, Engineering and Technology %I Open Science Index 78, 2013 %T Characterization of the LMOS with Different Channel Structure %U https://publications.waset.org/pdf/7837 %V 78 %X In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved. %P 979 - 982