@article{(Open Science Index):https://publications.waset.org/pdf/7865,
	  title     = {Fabrication and Electrical Characterization of Al/BaxSr1-xTiO3/Pt/SiO2/Si Configuration for FeFET Applications},
	  author    = {Ala'eddin A. Saif  and  Z. A. Z. Jamal and  Z. Sauli and  P. Poopalan},
	  country	= {},
	  institution	= {},
	  abstract     = {The ferroelectric behavior of barium strontium
titanate (BST) in thin film form has been investigated in order to
study the possibility of using BST for ferroelectric gate-field effect
transistor (FeFET) for memory devices application. BST thin films
have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The
variation of the dielectric constant (ε) and tan δ with frequency have
been studied to ensure the dielectric quality of the material. The
results show that at low frequencies, ε increases as the Ba content
increases, whereas at high frequencies, it shows the opposite
variation, which is attributed to the dipole dynamics. tan δ shows low
values with a peak at the mid-frequency range. The ferroelectric
behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V
characteristics. The results show that the strength of the ferroelectric
hysteresis loop increases as the Ba content increases; this is attributed
to the grain size and dipole dynamics effect.},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {5},
	  number    = {9},
	  year      = {2011},
	  pages     = {758 - 761},
	  ee        = {https://publications.waset.org/pdf/7865},
	  url   	= {https://publications.waset.org/vol/57},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 57, 2011},
	}