K. Karami and  S. Hassan and  S. Taking and  A. Ofiare and  A. Dhongde and  A. Al-Khalidi and  E. Wasige,  Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    February 2023, vol. 194(2). 47 - 50
    [viewed 10 May 2024]. Available from: https://publications.waset.org/pdf/10012945.