%0 Journal Article %A Ala'eddin A. Saif and Z. A. Z. Jamal and Z. Sauli and P. Poopalan %D 2011 %J International Journal of Materials and Metallurgical Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 57, 2011 %T Fabrication and Electrical Characterization of Al/BaxSr1-xTiO3/Pt/SiO2/Si Configuration for FeFET Applications %U https://publications.waset.org/pdf/7865 %V 57 %X The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect. %P 758 - 761