Search results for: CMOS IC design

Authors: Siavash Heydarzadeh, Massoud Dousti

Abstract:

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.

Keywords: CMOS active inductor , 0.18um CMOS technology , ADS

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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Authors: Nasir Mehmood, Saad Rahman, Vinodh Ravinath, Mahesh Balaji

Abstract:

This paper describes the design of a programmable FSK-modulator based on VCO and its implementation in 0.35m CMOS process. The circuit is used to transmit digital data at 100Kbps rate in the frequency range of 400-600MHz. The design and operation of the modulator is discussed briefly. Further the characteristics of PLL, frequency synthesizer, VCO and the whole design are elaborated. The variation among the proposed and tested specifications is presented. Finally, the layout of sub-modules, pin configurations, final chip and test results are presented.

Keywords: FSK Modulator, CMOS, VCO, Phase Locked Loop, Frequency Synthesizer.

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Authors: Parvinder S. Sandhu, Iqbaldeep Kaur, Amit Verma, Inderpreet Kaur, Birinderjit S. Kalyan

Abstract:

This work is a proposed model of CMOS for which the algorithm has been created and then the performance evaluation of this proposition has been done. In this context, another commonly used model called ZSTT (Zero Switching Time Transient) model is chosen to compare all the vital features and the results for the Proposed Equivalent CMOS are promising. In the end, the excerpts of the created algorithm are also included

Keywords: Dual Capacitor Model, ZSTT, CMOS, SPICEMacro-Model.

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Authors: Mahdi Ebrahimzadeh

Abstract:

In this paper we introduce an ultra low power CMOS LC oscillator and analyze a method to design a low power low phase noise complementary CMOS LC oscillator. A 1.8GHz oscillator is designed based on this analysis. The circuit has power supply equal to 1.1 V and dissipates 0.17 mW power. The oscillator is also optimized for low phase noise behavior. The oscillator phase noise is -126.2 dBc/Hz and -144.4 dBc/Hz at 1 MHz and 8 MHz offset respectively.

Keywords: LC oscillator, Low Power, Low Phase Noise

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Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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Authors: Wai Pan Chan, Minkyu Je

Abstract:

A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.

Keywords: Chopping, analog frontend, CMOS temperature sensor, traumatic brain injury (TBI), intracranial temperature monitoring.

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Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

Abstract:

This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V_th) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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Authors: Nasir Mehmood, Jens Ogniewski, Vinodh Ravinath

Abstract:

This paper describes the design of a real-time audiorange digital oscilloscope and its implementation in 90nm CMOS FPGA platform. The design consists of sample and hold circuits, A/D conversion, audio and video processing, on-chip RAM, clock generation and control logic. The design of internal blocks and modules in 90nm devices in an FPGA is elaborated. Also the key features and their implementation algorithms are presented. Finally, the timing waveforms and simulation results are put forward.

Keywords: CMOS, VLSI, Oscilloscope, Field Programmable Gate Array (FPGA), VHDL, Video Graphics Array (VGA)

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: Reza Faghih Mirzaee, Mohammad Hossein Moaiyeri, Keivan Navi

Abstract:

In this paper we present two novel 1-bit full adder cells in dynamic logic style. NP-CMOS (Zipper) and Multi-Output structures are used to design the adder blocks. Characteristic of dynamic logic leads to higher speeds than the other standard static full adder cells. Using HSpice and 0.18┬Ám CMOS technology exhibits a significant decrease in the cell delay which can result in a considerable reduction in the power-delay product (PDP). The PDP of Multi-Output design at 1.8v power supply is around 0.15 femto joule that is 5% lower than conventional dynamic full adder cell and at least 21% lower than other static full adders.

Keywords: Bridge Style, Dynamic Logic, Full Adder, HighSpeed, Multi Output, NP-CMOS, Zipper.

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Authors: Gao Wei, Xu Minglu, Xu Yan, Zhang Xiaotong, Wang Xinghua

Abstract:

A 3.5-bit stage of the CMOS pipelined ADC is proposed. In this report, the main part of 3.5-bit stage ADC is introduced. How the MDAC, comparator and encoder worked and designed are shown in details. Besides, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with differential amplifier, this OTA achieve high-gain and high-speed. This design was using CMOS 0.18um process and simulation in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB, the unity gain bandwidth of about 1.138GHz with 2pF load.

Keywords: pipelined ADC, MDAC, operational amplifier.

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Authors: M. Aleshams, A. Shahsavandi

Abstract:

This paper describes a CMOS four-quadrant multiplier intended for use in the front-end receiver by utilizing the square-law characteristic of the MOS transistor in the saturation region. The circuit is based on 0.35 um CMOS technology simulated using HSPICE software. The mixer has a third-order inter the power consumption is 271uW from a single 1.2V power supply. One of the features of the proposed design is using two MOS transistors limitation to reduce the supply voltage, which leads to reduce the power consumption. This technique provides a GHz bandwidth response and low power consumption.

Keywords: RF-Mixer, Multiplier, cut-off frequency, power consumption

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Authors: G. Ait Abdelmalek, R. Ziani

Abstract:

In this document, we have proposed a robust conceptual strategy, in order to improve the robustness against the manufacturing defects and thus the reliability of logic CMOS circuits. However, in order to enable the use of future CMOS technology nodes this strategy combines various types of design: DFR (Design for Reliability), techniques of tolerance: hardware redundancy TMR (Triple Modular Redundancy) for hard error tolerance, the DFT (Design for Testability. The Results on largest ISCAS and ITC benchmark circuits show that our approach improves considerably the reliability, by reducing the key factors, the area costs and fault tolerance probability.

Keywords: Design for reliability, design for testability, fault tolerance, manufacturing yield.

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Authors: Doshi N. A., Dhobale S. B., Kakade S. R.

Abstract:

As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI.

Keywords: Chip technology, Layout level, LFSR, Pass transistor

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: Semiconductors, digital electronics, double pass transistor technology, Full adder, fault tolerance.

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Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain

Abstract:

In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.

Keywords: Op-amp, rail-to-rail output, Miller compensation, negative Miller capacitance.

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Authors: M. Zamin Khan, Yanjie Wang, R. Raut

Abstract:

A 1V, 1GHz low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18um CMOS technology.With low power and noise optimization techniques, the amplifier provides a gain of 24 dB, a noise figure of only 1.2 dB, power dissipation of 14 mW from a 1 V power supply.

Keywords:

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Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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Authors: D. Krishnaveni, M. Geetha Priya

Abstract:

Applications of reversible logic gates in the design of complex integrated circuits provide power optimization.  This technique finds a great use in low power CMOS design, optical computing, quantum computing and nanotechnology. This paper proposes a reversible signed division circuit that can divide an n-bit signed dividend with an n-bit signed divisor using non-restoration division logic. The proposed design adequately addresses the ‘delay’ there by improving the efficiency of the circuit. An attempt is made to design a reversible signed division circuit. This paper provides a threshold to build more complex arithmetic systems using reversible logic, thus increasing the performance of computing systems.

Keywords: Low power CMOS, quantum computing, reversible logic gates, shift register, signed division.

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Authors: Pejman Hosseiniun, Rose Shayeghi, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices. In this paper, a new SRAM cell design based on CNFET technology is proposed. The proposed SRAM cell design for CNFET is compared with SRAM cell designs implemented with the conventional CMOS and FinFET in terms of speed, power consumption, stability, and leakage current. The HSPICE simulation and analysis show that the dynamic power consumption of the proposed 8T CNFET SRAM cell’s is reduced about 48% and the SNM is widened up to 56% compared to the conventional CMOS SRAM structure at the expense of 2% leakage power and 3% write delay increase.

Keywords: SRAM cell, CNFET, low power, HSPICE.

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Authors: Mansi Jhamb, R. K. Sharma, A. K. Gupta

Abstract:

In the current scenario, with the increasing integration densities, most system-on-chip designs are partitioned into multiple clock domains. In this paper, an asynchronous FIFO (First-in First-out pipeline) design is employed as a data transfer interface between two independent clock domains. Since the clocks on the either sides of the FIFO run at a different speed, the task to ensure the correct data transmission through this FIFO is manually performed. Firstly an existing asynchronous FIFO design is discussed and simulated. Gate-level simulation results depicted the flaw in existing design. In order to solve this problem, a novel modified asynchronous FIFO design is proposed. The results obtained from proposed design are in perfect accordance with theoretical expectations. The proposed asynchronous FIFO design outperforms the existing design in terms of accuracy and speed. In order to evaluate the performance of the FIFO designs presented in this paper, the circuits were implemented in 0.24µ TSMC CMOS technology and simulated at 2.5V using HSpice (© Avant! Corporation). The layout design of the proposed FIFO is also presented.

Keywords: Asynchronous, Clock, CMOS, C-element, FIFO, Globally Asynchronous Locally Synchronous (GALS), HSpice.

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Authors: Arash Azizi Mazreah, Mohammad Reza Sahebi, Mohammad T. Manzuri Shalmani

Abstract:

To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.

Keywords: SRAM Cell, leakage current, cell area.

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Authors: Raheleh Hedayati, Sanaz Haddadian, Hooman Nabovati

Abstract:

A 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in a 0.18-μm CMOS technology with a 1.8V supply, is presented. Current bleeding (charge injection) technique has been used to increase the conversion gain and the linearity of the mixer. The proposed mixer provides 10.75 dB conversion gain ( C G ) with 14.3mw total power consumption. The IIP3 and 1-dB compression point of the mixer are 8dbm and -4.6dbm respectively, at 300 MHz IF frequencies. Comparing the current design against the conventional mixer design, demonstrates better performance in the conversion gain, linearity, noise figure and port-to-port isolation.

Keywords: Mixer, Gilbert Cell, Charge Injection, RFIC, CMOSTechnology.

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Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

Abstract:

This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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