@article{(Open Science Index):https://publications.waset.org/pdf/7310,
	  title     = {A 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology},
	  author    = {Siavash Heydarzadeh and  Massoud Dousti},
	  country	= {},
	  institution	= {},
	  abstract     = {A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.
},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {6},
	  number    = {9},
	  year      = {2012},
	  pages     = {1052 - 1055},
	  ee        = {https://publications.waset.org/pdf/7310},
	  url   	= {https://publications.waset.org/vol/69},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 69, 2012},
	}