@article{(Open Science Index):https://publications.waset.org/pdf/10011611, title = {Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit}, author = {Rohana Musa and Yuzman Yusoff and Chia Chieu Yin and Hanif Che Lah}, country = {}, institution = {}, abstract = {This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.}, journal = {International Journal of Electrical and Computer Engineering}, volume = {14}, number = {11}, year = {2020}, pages = {371 - 375}, ee = {https://publications.waset.org/pdf/10011611}, url = {https://publications.waset.org/vol/167}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 167, 2020}, }