@article{(Open Science Index):https://publications.waset.org/pdf/10011611,
	  title     = {Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit},
	  author    = {Rohana Musa and  Yuzman Yusoff and  Chia Chieu Yin and  Hanif Che Lah},
	  country	= {},
	  institution	= {},
	  abstract     = {This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {14},
	  number    = {11},
	  year      = {2020},
	  pages     = {371 - 375},
	  ee        = {https://publications.waset.org/pdf/10011611},
	  url   	= {https://publications.waset.org/vol/167},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 167, 2020},
	}