%0 Journal Article %A Rohana Musa and Yuzman Yusoff and Chia Chieu Yin and Hanif Che Lah %D 2020 %J International Journal of Electrical and Computer Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 167, 2020 %T Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit %U https://publications.waset.org/pdf/10011611 %V 167 %X This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results. %P 371 - 375