Search results for: thin%20film%20solar%20cells.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 364

Search results for: thin%20film%20solar%20cells.

304 Characterization of Microroughness Parameters in Cu and Cu2O Nanoparticles Embedded in Carbon Film

Authors: S.Solaymani, T.Ghodselahi, N.B.Nezafat, H.Zahrabi, A.Gelali

Abstract:

The morphological parameter of a thin film surface can be characterized by power spectral density (PSD) functions which provides a better description to the topography than the RMS roughness and imparts several useful information of the surface including fractal and superstructure contributions. Through the present study Nanoparticle copper/carbon composite films were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and copper target. Surface morphology of thin films is characterized by using atomic force microscopy (AFM). The Carbon content of our films was obtained by Rutherford Back Scattering (RBS) and it varied from .4% to 78%. The power values of power spectral density (PSD) for the AFM data were determined by the fast Fourier transform (FFT) algorithms. We investigate the effect of carbon on the roughness of thin films surface. Using such information, roughness contributions of the surface have been successfully extracted.

Keywords: Atomic force microscopy, Fast Fourier transform, Power spectral density, RBS.

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303 Fabrication and Electrical Characterization of Al/BaxSr1-xTiO3/Pt/SiO2/Si Configuration for FeFET Applications

Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

Abstract:

The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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302 Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate

Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato

Abstract:

CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.

Keywords: CuAlO2, silicide, thin films, transparent conducting oxide, sol-gel.

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301 Study the Influence of Chemical Treatment on the Compositional Changes and Defect Structures of ZnS Thin Film

Authors: N. Dahbi, D-E. Arafah

Abstract:

The effect of chemical treatment in CdCl2 on the compositional changes and defect structures of potentially useful ZnS solar cell thin films prepared by vacuum deposition method was studied using the complementary Rutherford backscattering (RBS) and Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various as deposited samples studied. After treatment, perturbation on the intensity is noted; mobile defect states and charge conversion and/or transfer between defect states are found.

Keywords: chemical treatment, defect, glow curve, RBS, thinfilm, thermoluminescence, ZnS, vacuum deposition

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300 Effects of Pipe Curvature and Internal Pressure on Stiffness and Buckling Phenomenon of Circular Thin-Walled Pipes

Authors: V. Polenta, S. D. Garvey, D. Chronopoulos, A. C. Long, H. P. Morvan

Abstract:

A parametric study on circular thin-walled pipes subjected to pure bending is performed. Both straight and curved pipes are considered. Ratio D/t, initial pipe curvature and internal pressure are the parameters varying in the analyses. The study is mainly FEA-based. It is found that negative curvatures (opposite to bending moment) considerably increase stiffness and buckling limit of the pipe when no internal pressure is acting and, similarly, positive curvatures decrease the stiffness and buckling limit. For internal pressurised pipes the effects of initial pipe curvature are less relevant. Results show that this phenomenon is in relationship with the cross-section deformation due to bending moment, which undergoes relevant ovalisation for no pressurised pipes and little ovalisation for pressurised pipes.

Keywords: Buckling, curved pipes, internal pressure, ovalisation, pure bending, thin-walled pipes.

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299 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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298 Thermoelastic Waves in Anisotropic Platesusing Normal Mode Expansion Method with Thermal Relaxation Time

Authors: K.L. Verma

Abstract:

Analysis for the generalized thermoelastic Lamb waves, which propagates in anisotropic thin plates in generalized thermoelasticity, is presented employing normal mode expansion method. The displacement and temperature fields are expressed by a summation of the symmetric and antisymmetric thermoelastic modes in the surface thermal stresses and thermal gradient free orthotropic plate, therefore the theory is particularly appropriate for waveform analyses of Lamb waves in thin anisotropic plates. The transient waveforms excited by the thermoelastic expansion are analyzed for an orthotropic thin plate. The obtained results show that the theory provides a quantitative analysis to characterize anisotropic thermoelastic stiffness properties of plates by wave detection. Finally numerical calculations have been presented for a NaF crystal, and the dispersion curves for the lowest modes of the symmetric and antisymmetric vibrations are represented graphically at different values of thermal relaxation time. However, the methods can be used for other materials as well

Keywords: Anisotropic, dispersion, frequency, normal, thermoelasticity, wave modes.

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297 A Hybrid Differential Transform Approach for Laser Heating of a Double-Layered Thin Film

Authors: Cheng-Ying Lo

Abstract:

This paper adopted the hybrid differential transform approach for studying heat transfer problems in a gold/chromium thin film with an ultra-short-pulsed laser beam projecting on the gold side. The physical system, formulated based on the hyperbolic two-step heat transfer model, covers three characteristics: (i) coupling effects between the electron/lattice systems, (ii) thermal wave propagation in metals, and (iii) radiation effects along the interface. The differential transform method is used to transfer the governing equations in the time domain into the spectrum equations, which is further discretized in the space domain by the finite difference method. The results, obtained through a recursive process, show that the electron temperature in the gold film can rise up to several thousand degrees before its electron/lattice systems reach equilibrium at only several hundred degrees. The electron and lattice temperatures in the chromium film are much lower than those in the gold film.

Keywords: Differential transform, hyperbolic heat transfer, thin film, ultrashort-pulsed laser.

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296 Preparation of Nanophotonics LiNbO3 Thin Films and Studying Their Morphological and Structural Properties by Sol-Gel Method for Waveguide Applications

Authors: A. Fakhri Makram, Marwa S. Alwazni, Al-Douri Yarub, Evan T. Salim, Hashim Uda, Chin C. Woei

Abstract:

Lithium niobate (LiNbO3) nanostructures are prepared on quartz substrate by the sol-gel method. They have been deposited with different molarity concentration and annealed at 500°C. These samples are characterized and analyzed by X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM). The measured results showed an importance increasing in molarity concentrations that indicate the structure starts to become crystal, regular, homogeneous, well crystal distributed, which made it more suitable for optical waveguide application.

Keywords: Lithium niobate, morphological properties, Pechini method, thin film.

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295 Using Printing Method and Post Heat Treatment to Fabricate CIS Absorber Layer

Authors: Mao-An Chen, Chien-Chen Diao, Chia-Cheng Huang, Chin-Guo Kuo, Cheng-Fu Yang, Yen-Lin Chen

Abstract:

In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

Keywords: CuInSe2, isopropyl alcohol, spray coating method, annealing, selenization process.

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294 Surface Charge Based Rapid Method for Detection of Microbial Contamination in Drinking Water and Food Products

Authors: Kandpal M. , Gundampati R. K , Debnath M.

Abstract:

Microbial contamination, most of which are fecal born in drinking water and food industry is a serious threat to humans. Escherichia coli is one of the most common and prevalent among them. We have developed a sensor for rapid and an early detection of contaminants, taking E.coli as a threat indicator organism. The sensor is based on co-polymerizations of aniline and formaldehyde in form of thin film over glass surface using the vacuum deposition technique. The particular doping combination of thin film with Fe-Al and Fe-Cu in different concentrations changes its non conducting properties to p- type semi conductor. This property is exploited to detect the different contaminants, believed to have the different surface charge. It was found through experiments that different microbes at same OD (0.600 at 600 nm) have different conductivity in solution. Also the doping concentration is found to be specific for attracting microbes on the basis of surface charge. This is a simple, cost effective and quick detection method which not only decreases the measurement time but also gives early warnings for highly contaminated samples.

Keywords: Sensor, Vacuum deposition technique, thin film, E.coli detection, doping concentration.

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293 Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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292 Design and Production of Thin-Walled UHPFRC Footbridge

Authors: P. Tej, P. Kněž, M. Blank

Abstract:

The paper presents design and production of thin-walled U-profile footbridge made of UHPFRC. The main structure of the bridge is one prefabricated shell structure made of UHPFRC with dispersed steel fibers without any conventional reinforcement. The span of the bridge structure is 10 m and the clear width of 1.5 m. The thickness of the UHPFRC shell structure oscillated in an interval of 30-45 mm. Several calculations were made during the bridge design and compared with the experiments. For the purpose of verifying the calculations, a segment of 1.5 m was first produced, followed by the whole footbridge for testing. After the load tests were done, the design was optimized to cast the final footbridge.

Keywords: Footbridge, UHPFRC, non-linear analysis, shell structure.

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291 Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film

Authors: S. R. Kumar, Shashikant Rajpal

Abstract:

A nanocrystalline thin film of ZnSe was successfully electrodeposited on copper substrate using a non-aqueous solution and subsequently annealed in air at 400°C. XRD analysis indicates the polycrystalline deposit of (111) plane in both the cases. The sharpness of the peak increases due to annealing of the film and average grain size increases to 20 nm to 27nm. SEM photograph indicate that grains are uniform and densely distributed over the surface. Annealing increases the average grain size by 20%. The EDS spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed film. AFM analysis indicates the average roughness of the film reduces from 181nm to 165nm due to annealing of the film. The bandgap also decreases from 2.71eV to 2.62eV.

Keywords: Electrodeposition, Non-aqueous medium, SEM, XRD.

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290 Comparison of Methods of Testing Composite Slabs

Authors: J. Holomek, R. Karásek, M. Bajer, J. Barnat

Abstract:

Composite steel-concrete slabs using thin-walled corrugated steel sheets with embossments represent a modern and effective combination of steel and concrete. However, the design of new types of sheeting is conditional on the execution of expensive and time-consuming laboratory testing. The effort to develop a cheaper and faster method has lead to many investigations all over the world. In our paper we compare the results from our experiments involving vacuum loading, four-point bending and small-scale shear tests.

Keywords: Composite slab, embossment, four-point bending, small-scale test, steel sheet, thin-walled, vacuum loading

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289 Resistive Switching in TaN/AlNx/TiN Cell

Authors: Hsin-Ping Huang, Shyankay Jou

Abstract:

Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

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288 Elastic-Plastic Transition in a Thin Rotating Disc with Inclusion

Authors: Pankaj, Sonia R. Bansal

Abstract:

Stresses for the elastic-plastic transition and fully plastic state have been derived for a thin rotating disc with inclusion and results have been discussed numerically and depicted graphically. It has been observed that the rotating disc with inclusion and made of compressible material requires lesser angular speed to yield at the internal surface whereas it requires higher percentage increase in angular speed to become fully plastic as compare to disc made of incompressible material.

Keywords: Angular speed, Elastic-Plastic, Inclusion, Rotatingdisc, Stress, Transition.

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287 Mechanical Properties and Microstructural Properties of CrSiN Coating

Authors: Dhiflaoui Hafedh, Khlifi Kaouthar, Ben Cheikh Larbi Ahmed

Abstract:

The present study deals with the characterization of CrSiN coatings obtained by PVD magnetron sputtering systems. CrSiN films were deposited with different Si contents, in order to check the effect of at.% variation on the different properties of the Cr–N system. Coatings were characterized by scanning electron microscopy (SEM) for thickness measurements, X-ray diffraction. Surface morphology and the roughness characteristics were explored using AFM, Mechanicals properties, elastic and plastic deformation resistance of thin films were investigated using nanoindentation test. We observed that the Si addition improved the hardness and the Young’s modulus of the Cr–N system. Indeed, the hardness value is 18,56 GPa for CrSiN coatings. Besides, the Young’s modulus value is 224,22 GPa for CrSiN coatings for Si content of 1.2 at.%.

Keywords: Thin film, mechanicals properties, PVD.

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286 Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell

Authors: F. Djaafar, B. Hadri, G. Bachir

Abstract:

This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

Keywords: Heterojunction, modeling, simulation, thin film, Tcad Silvaco.

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285 Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation

Authors: Jaibir Sharma, Lee JaeWung, Merugu Srinivas, Navab Singh

Abstract:

This paper presents thermal annealing de-wetting technique for the preparation of porous metal membrane for Thin Film Encapsulation (TFE) application. Thermal annealing de-wetting experimental results reveal that pore size formation in porous metal membrane depend upon i.e. 1. The substrate at which metal is deposited, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for formation of porous metal membrane. In order to demonstrate this technique, Silver (Ag) was used as a metal for preparation of porous metal membrane on amorphous silicon (a-Si) and silicon oxide. The annealing of the silver thin film of various thicknesses was performed at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for TFE application, the porous silver film prepared on amorphous silicon (a- Si) and silicon oxide was released using XeF2 and VHF, respectively. Finally, guide line and structures are suggested to use this porous membrane for robust TFE application.

Keywords: De-wetting, thermal annealing, metal, melting point, porous.

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284 Effect of Support Distance on Damage of Drilled Thin CFRP Laminates

Authors: Jean François Chatelain, Imed Zaghbani, Gilbert Lebrun, Kaml Hasni

Abstract:

Severe damages may occur during the drilling of carbon fiber reinforced plastics (CFRP). In practice, this damage is limited by adding a backup support to the drilled parts. For some aeronautical parts with curvatures, backing up parts is a demanding process. In order to simplify the operation, this research studies the effect of using a configurable setup to support parts on the resulting quality of drilled holes. The test coupons referenced in this study are twenty four-plies unidirectional laminates made of carbon fibers and epoxy resin. Different signals were measured during the drilling process for these laminates, including the thrust force, the displacement and the acceleration. The processing of these signals demonstrated that the damage is due to the combination of two main factors: the spring-back of the thin part and the thrust force. The results found were confirmed for different feeds and speeds. When the distance between supports is increased, it is observed that the spring-back increases but the thrust force decreases. The study proves the feasibility of unsupported drilling of thin CFRP laminates without creating any observable damage.

Keywords: CFRP, Damage, Drilling, Flexible setup.

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283 Approximate Tension Buckling Capacity of Thin Edge-Cracked Web Plate Subjected to Pure Bending

Authors: Sebastian B. Mendes

Abstract:

The presence of a vertical edge-crack within a web plate subjected to pure bending induces local compressive stresses about the crack which may cause tension buckling. Approximate theoretical expressions were derived for the critical far-field tensile stress and bending moment capacity of an edge-cracked web plate associated with tension buckling. These expressions were validated with finite element analyses and used to investigate the possibility of tension buckling in web-cracked trial girders. It was found that tension buckling is an unlikely occurrence unless the web is relatively thin or the crack is very long.

Keywords: Fatigue crack, tension buckling, Rayleigh-Ritz, structural stability.

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282 Creep Transition in a Thin Rotating Disc Having Variable Density with Inclusion

Authors: Pankaj, Sonia R. Bansal

Abstract:

Creep stresses and strain rates have been obtained for a thin rotating disc having variable density with inclusion by using Seth-s transition theory. The density of the disc is assumed to vary radially, i.e. ( ) 0 ¤ü ¤ü r/b m - = ; ¤ü 0 and m being real positive constants. It has been observed that a disc, whose density increases radially, rotates at higher angular speed, thus decreasing the possibility of a fracture at the bore, whereas for a disc whose density decreases radially, the possibility of a fracture at the bore increases.

Keywords: Elastic-Plastic, Inclusion, Rotating disc, Stress, Strain rates, Transition, variable density.

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281 Nano Effects of Nitrogen Ion Implantation on TiN Hard Coatings Deposited by PVD and IBAD

Authors: Branko Skoric, Aleksandar Miletic, Pal Terek, Lazar Kovacevic, Milan Kukuruzovic

Abstract:

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N5+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

Keywords: Steel, coating, super hard, ion implantation, nanohardness.

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280 A Compact Wearable Slot Antenna for LTE and WLAN Applications

Authors: Haider K. Raad

Abstract:

In this paper, a compact wide-band, ultra-thin and flexible slot antenna intended for wearable applications is presented. The presented antenna is designed to provide Wireless Local Area Network (WLAN) and Long Term Evolution (LTE) connectivity. The presented design exhibits a relatively wide bandwidth (1600-3500 MHz below -6 dB impedance bandwidth limit). The antenna is positioned on a 33 mm x 30 mm flexible substrate with a thickness of 50 µm. Antenna properties, such as the far-field radiation patterns, scattering parameter S11 are provided. The presented compact, thin and flexible design along with excellent radiation characteristics are deemed suitable for integration into flexible and wearable devices.

Keywords: Wearable Electronics, Slot Antenna, LTE, WLAN.

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279 Effect of Thickness on Structural and Electrical Properties of CuAlS2 Thin Films Grown by Two Stage Vacuum Thermal Evaporation Technique

Authors: A. U. Moreh, M. Momoh, H. N. Yahya, B. Hamza, I. G. Saidu, S. Abdullahi

Abstract:

This work studies the effect of thickness on structural and electrical properties of CuAlS2 thin films grown by two stage vacuum thermal evaporation technique. CuAlS2 thin films of thicknesses 50nm, 100nm and 200nm were deposited on suitably cleaned corning 7059 glass substrate at room temperature (RT). In the first stage Cu-Al precursors were grown at room temperature by thermal evaporation and in the second stage Cu-Al precursors were converted to CuAlS2 thin films by sulfurisation under sulfur atmosphere at the temperature of 673K. The structural properties of the films were examined by X-ray diffraction (XRD) technique while electrical properties of the specimens were studied using four point probe method. The XRD studies revealed that the films are of crystalline in nature having tetragonal structure. The variations of the micro-structural parameters, such as crystallite size (D), dislocation density ( ), and micro-strain ( ), with film thickness were investigated. The results showed that the crystallite sizes increase as the thickness of the film increases. The dislocation density and micro-strain decreases as the thickness increases. The resistivity (  ) of CuAlS2 film is found to decrease with increase in film thickness, which is related to the increase of carrier concentration with film thickness. Thus thicker films exhibit the lowest resistivity and high carrier concentration, implying these are the most conductive films. Low electrical resistivity and high carrier concentration are widely used as the essential components in various optoelectronic devices such as light-emitting diode and photovoltaic cells.

Keywords: Crystalline, CuAlS2, evaporation, resistivity, sulfurisation, thickness.

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278 Graphene/ZnO/Polymer Nanocomposite Thin Film for Separation of Oil-Water Mixture

Authors: Suboohi Shervani, Jingjing Ling, Jiabin Liu, Tahir Husain

Abstract:

Offshore oil-spill has become the most emerging problem in the world. In the current paper, a graphene/ZnO/polymer nanocomposite thin film is coated on stainless steel mesh via layer by layer deposition method. The structural characterization of materials is determined by Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The total petroleum hydrocarbons (TPHs) and separation efficiency have been measured via gas chromatography – flame ionization detector (GC-FID). TPHs are reduced to 2 ppm and separation efficiency of the nanocomposite coated mesh is reached ≥ 99% for the final sample. The nanocomposite coated mesh acts as a promising candidate for the separation of oil- water mixture.

Keywords: Oil-spill, graphene, oil-water separation, nanocomposite.

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277 Estimation of the Moisture Diffusivity and Activation Energy in Thin Layer Drying of Ginger Slices

Authors: Ebru Kavak Akpinar, Seda Toraman

Abstract:

In the present work, the effective moisture diffusivity and activation energy were calculated using an infinite series solution of Fick-s diffusion equation. The results showed that increasing drying temperature accelerated the drying process. All drying experiments had only falling rate period. The average effective moisture diffusivity values varied from 2.807x10-10 to 6.977x10-10m2 s_1 over the temperature and velocity range. The temperature dependence of the effective moisture diffusivity for the thin layer drying of the ginger slices was satisfactorily described by an Arrhenius-type relationship with activation energy values of 19.313- 22.722 kJ.mol-1 within 40–70 °C and 0.8-3 ms-1 temperature range.

Keywords: Ginger, Drying, Activation energy, Moisture diffusivity.

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276 Comparative Forensic Analysis of Lipsticks Using Thin Layer Chromatography and Gas Chromatography

Authors: M. O. Ezegbogu, H. B. Osadolor

Abstract:

Lipsticks constitute a significant source of transfer evidence, and can, therefore, provide corroborative or inclusionary evidence in criminal investigation. This study aimed to determine the uniqueness and persistence of different lipstick smears using Thin Layer Chromatography (TLC), and Gas Chromatography with a Flame Ionisation Detector (GC-FID). In this study, we analysed lipstick smears retrieved from tea cups exposed to the environment for up to four weeks. The n-alkane content of each sample was determined using GC-FID, while TLC was used to determine the number of bands, and retention factor of each band per smear. This study shows that TLC gives more consistent results over a 4-week period than GC-FID. It also proposes a maximum exposure time of two weeks for the analysis of lipsticks left in the open using GC-FID. Finally, we conclude that neither TLC nor GC-FID can distinguish lipstick evidence recovered from hypothetical crime scenes.

Keywords: Forensic science, chromatography, identification, lipstick.

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275 The Grinding Influence on the Strength of Fan-Out Wafer-Level Packages

Authors: Z. W. Zhong, C. Xu, W. K. Choi

Abstract:

To build a thin fan-out wafer-level package, the package had to be ground to a thin level. In this work, the influence of the grinding processes on the strength of the fan-out wafer-level packages was investigated. After different grinding processes, all specimens were placed on a three-point-bending fixture installed on a universal tester for three-point-bending testing, and the strength of the fan-out wafer-level packages was measured. The experiments revealed that the average flexure strength increased with the decreasing surface roughness height of the fan-out wafer-level package tested. The grinding processes had a significant influence on the strength of the fan-out wafer-level packages investigated.

Keywords: FOWLP strength, surface roughness, three-point bending, grinding.

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