Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 32804
Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film

Authors: S. R. Kumar, Shashikant Rajpal

Abstract:

A nanocrystalline thin film of ZnSe was successfully electrodeposited on copper substrate using a non-aqueous solution and subsequently annealed in air at 400°C. XRD analysis indicates the polycrystalline deposit of (111) plane in both the cases. The sharpness of the peak increases due to annealing of the film and average grain size increases to 20 nm to 27nm. SEM photograph indicate that grains are uniform and densely distributed over the surface. Annealing increases the average grain size by 20%. The EDS spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed film. AFM analysis indicates the average roughness of the film reduces from 181nm to 165nm due to annealing of the film. The bandgap also decreases from 2.71eV to 2.62eV.

Keywords: Electrodeposition, Non-aqueous medium, SEM, XRD.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1099932

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2331

References:


[1] R. Chanrdamohan, A. Kathalingam, K. Kumar, D. Kalyanaraman, and T. Mahalingam, “Studies on Electrosynthesized Semiconducting Zinc Selenide Thin Films,” Ionics, vol.10, pp.297, 2004.
[2] H. Morkoe, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, “Large bandgap SiC, III-V nitride and II-VI ZnSe-based semiconductor device technologies,” J. Appl. Phys., vol. 76, pp 1363, 1994.
[3] K.R. Murali, S. Dhanapandiyana, and C. Manoharana, “Pulse Electrodeposited Zinc Selenide Films and Their Characteristics,” Chalcogenide Lett., vol. 6, pp-51, 2009.
[4] J.M. Dona, and J. Herrero, “Chemical-Bath Deposition of ZnSe Thin Films: Process and Material Characterization,” J. Electrochem. Soc., vol. 142, pp-764, 1995.
[5] N.J. Suthan Kissinger, N. Velmurugan, and K. Perumal, “Substratetemperature- dependent Structural and Optical Properties of ZnSe Thin Films Fabricated by Using an Electron Beam Evaporation Technique,” J. Korean Phys. Soc., Vol. 55, pp- 1577, 2009.
[6] T. Mahalingam, A. Kathalingam, S. Lee, S. Moon, and Y.D. Kim, “Studies of electrosynthesized Zinc Selenide thin films,” J. New Mater. Electrochem. Sys., Vol. 10, pp-15, 2007.
[7] M.C. Harris Liao, Y.H. Chang, Y.F. Chen, J.W. Hsu, J.M. Lin, and W.C. Chou, "Fabrication of ZnSe Quantum Dots Under Volmer-Weber Mode by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., Vol. 70, pp-2256, 1997.
[8] H. Li, and W. Jie,"Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport," J. Cryst. Growth, Vol. 257, pp-110, 2003.
[9] N. Sankar, and K. Ramachandran,"On the thermal and optical properties of ZnSe and doped ZnSe crystals grown by PVT," J. Cryst. Growth, Vol. 247, pp-157, 2003.
[10] E. Guziewicz, M. Godlewski, K. Kopalko, E. Lus-akowska, E. Dynowska, M. Guziewicz, M.M. Godlewski, and M. Phillips, "Atomic layer deposition of thin films of ZnSe—structural and optical characterization, Thin Solid Films , Vol. 446, pp-446, 2004.
[11] A. Rizzo, M. A. Tagliente, L. Caneve, and S. Scaglione,"The influence of the momentum transfer on the structural and optical properties of ZnSe thin films prepared by r.f. magnetron sputtering," Thin Solid Films, Vol. 368, pp-8, 2000.
[12] R.K. Aloney, J.K. Dongre, B.E. Chandra, and M. Ramrakhi-ani, "Photoelectrochemical Solar Cells Based on Electro-codeposited CdSe/ZnSe Double Layer Photoelectrodes," Chalcogenide Lett., Vol. 6, pp-569, 2009.
[13] K. Singh, and J.P. Rai,"Electrosynthesis and photoelectroactivity of polycrystalline p-zinc selenide," Phys. Status Solidi, Vol. A 99, pp-257, 1987.
[14] C. Natarajan, M. Sharon, C. Levy-Clement, and M. Neu-mann-Spallart, "Electrodeposition of zinc selenide," Thin Solid Films, Vol. 237, pp- 118, 1994.
[15] A. P. Samantilleke, M. H. Boyle, J. Young, and I. M. Dharma-dasa, "Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices," J. Mater. Sci. Mater. Electron., Vol. 9, pp- 2891998.
[16] G. Riveros, H. Gomez, R. Henriquez, R. Schrebler, R.E. Marotti, and E.A. Dalchiele, "Electrodeposition and characterization of ZnSe semiconductor thin films," Sol. Energy Mater. Sol. Cells, Vol.70, pp- 255, 2001.
[17] M. Bouroushian, T. Kosanovic, Z. Loizos, and Z. Spyrellis, “Electrochemical formation of ZnSe from acidic aqueous solutions,” J. Solid State Electrochem., Vol. 6, pp-272, 2002.
[18] Dori. Gal, and G. Hodes,"Electrochemical Deposition of ZnSe and (Zn,Cd)Se Films from Nonaqueous Solutions," J. Electrochem. Soc., Vol. 147,pp- 1825, 2000.
[19] K.R. Murali, S. Kala, and P. Elango,"Characteristics of ZnS films pulse plated using non-aqueous electrolytes," J. Mater. Sci. Mater. Electron., Vol. 21, pp- 1293, 2010.
[20] R. Kowalik, P. Zabinski, and K. Fitzner,"Electrodeposition of ZnSe," Electrochim. Acta, Vol.53, pp-6184, 2008.
[21] G. Riveros, H. Gomez, R. Henriquez, R. Sshrebler, and R. Cordova, "Electrodeposition and characterization of ZnX (X=Se,Te) semicond. Thin Films," Bol. Soc. Chil.Quim., Vol. 47, pp-411, 2002.